title: |
Excess Noise Factor of a-Si:H/a-SiC:H Separated Absorption and Multiplication Region Superlattice-like Avalanche Photodiodes (SAM-SAPDs) |
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publication: |
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part of series: |
Advances in Intelligent Systems Research | |
ISBN: |
978-90-78677-01-7 | |
ISSN: |
1951-6851 | |
DOI: |
doi:10.2991/jcis.2006.309 (how to use a DOI) | |
author(s): |
Neng-Fu Shih, Huei -Ching Huang, Chung-Yuan Kung, Chun-Chih Chiu, Hong Jyh-Wong |
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corresponding author: |
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publication date: |
October 2006 |
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keywords: |
excess noise factor, mean multiplication, ionization rate |
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abstract: |
In this paper, an a-Si:H/a-SiC:H separated absorption and multiplication region superlattice avalanche photodiode (SAM-SAPD) is fabricated successfully by using combined effect of band edge discontinuity and build-in potential in p-n junction. We discuss the relationships among excess noise factor (Fe), mean multiplication (Me), and the ionization rate (ks) for this SAM-SAPD. Lastly, make comparisons between the theoretical calculations and the experimental results for Fe vs. Me . In order to prove that the theoretical calculations can fit well with the experimental data, we make the suppositions for the absorption region and the ionization coefficients for each layer of the proposed SAM-SAPD. |
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copyright: |
©
Atlantis Press. This article is distributed under the
terms of the Creative Commons Attribution License, which permits
non-commercial use, distribution and reproduction in any medium,
provided the original work is properly cited. |
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full text: |