Proceedings of the 2nd Annual International Conference on Advanced Material Engineering (AME 2016)

Session: Chapter 7 Semiconductors

8 articles
Proceedings Article

Study on Growth Conditions for High Quality Hydrogenated Amorphous Silicon Oxide Films

Chao-Chao Jiang, Jing Jin, Xing-Ling Qu, Lu Huang, Can Liu, Jia-Hua Min, Wei-Min Shi
Wide band gap hydrogenated amorphous silicon oxide(a-SiOx:H) films were prepared by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) method. Nitrous oxide(N2O), hydrogen(H2), silane(SiH4) were used as source gases. With the increase of N2O/SiH4 ratio from 0.5 to 2, the optical band...
Proceedings Article

The Same Formation Mechanism of Surface Pits for both a- and c-plane GaN

Zhi-Yuan Gao, Jiang-Jiang Li, Xiao-Wei Xue, De-Shu Zou
Surface pits in a-plane GaN have long been considered as a result of island coalescence in literature, while pits in c-plane GaN are the surface termination of screw dislocations. It is found in the paper that small surface pits on a-plane GaN also terminate perfect screw dislocations and partial dislocations...
Proceedings Article

GaN Films under Different Growth Mechanisms Studied by Synchrotron X-ray Absorption Spectroscopy

Qing-Xuan Li, Yu-Jia Liu, Yao Liu, Yi Liang, Hao-Hsiung Lin, Jyh-Fu Lee, Na Lu, Ian T. Ferguson, Ling-Yu Wan, Zhe Chuan Feng
Synchrotron radiation X-ray absorptionmeasurements wereperformed to study the structure of Si-doped n-type GaN layers grown on sapphire by metalorganic chemical vapor deposition (MOCVD) and undoped GaN epitaxial layers grown on Si by molecular beam epitaxy (MBE).It was found that the anisotropic characteristic...
Proceedings Article

Elastic properties and Debye Temperature of Tetragonal and Cubic Ga3Zr under High Pressure: A First-Principles Investigation

Jian Li, Le Chen, Jin-Sheng Zhao, Jian-Ping Xu, Xian Luo
Two different phases of Ga3Zr with tetragonal (D022) and cubic (Ll2) structures under high pressure are investigated by using density functional theory (DFT) calculations. The elastic constants (Cij) and mechanical moduli, including bulk modulus (B) and shear modulus (G), are calculated under various...
Proceedings Article

Synthesis of Ce/N Co-doped TiO2 Using CTAB Template with Improved Visible-light-driven Photocatalysis

S.Y. Yang, L.F. Yao, X. Wang, D.G. Xie, Y. Mao, Y. W. Geng, C. C. Jiang
Visible light active photocatalysts were prepared using N/Ce co-doped anatase TiO2 nanoparticles and using cetyltrimethyl ammonium bromide (CTAB) as template. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), fourier transformation infrared spectroscopy (FTIR),...
Proceedings Article

The Effects of Dislocations on the Crystal Growth Rate of Silicon --A Molecular Dynamics Study

C. Zhang, B. Liu, K. Li, N.G. Zhou, L. Zhou
Based on the Tersoff potential, we have investigated the effects of dislocations on the crystal growth rate of Si (110) rough interface by a molecular dynamics simulation. The atomic structures show that, the (110) interface morphology with a dislocation keeps flatness similar to that of dislocation-free....
Proceedings Article

Transparent Conductive Thin Films of Aluminum-doped Zinc Oxide Prepared by Magnetron Sputtering

H. Zhu, H.M. Wang, S.Q. Gong, H.Y. Kuang, Y.X. Wang
Transparent conductive thin films of aluminum-doped zinc oxide (ZAO) were prepared by radio-frequency magnetron sputtering with ZAO (98 wt% ZnO, 2 wt% Al2O3) as the ceramic target. The visible transmittance was investigated by ultraviolet–visible spectroscopy, the carrier concentration and Hall mobility...
Proceedings Article

Synthesis of Monolayer MoS2 by CVD Approach

Y.Y. Wen, X.B. Zeng, X.X. Chen, W.Z. Wang, J. Ding, S.E. Xu
The monolayer MoS2 thin film was deposited directly on quartz substrate by chemical vapor deposition (CVD) approach using MoO3 and sulfur powders as reactants. Raman spectroscopic and photoluminescence (PL) spectroscopic analyses were conducted to evaluate the structural and optical property of the grown...