Excess Noise Factor of a-Si:H/a-SiC:H Separated Absorption and Multiplication Region Superlattice-like Avalanche Photodiodes (SAM-SAPDs)
Neng-Fu Shih 0, Huei -Ching Huang, Chung-Yuan Kung, Chun-Chih Chiu, Hong Jyh-Wong
0Hsiuping Institute of Technology
Available Online October 2006.
- https://doi.org/10.2991/jcis.2006.309How to use a DOI?
- excess noise factor, mean multiplication, ionization rate
- In this paper, an a-Si:H/a-SiC:H separated absorption and multiplication region superlattice avalanche photodiode (SAM-SAPD) is fabricated successfully by using combined effect of band edge discontinuity and build-in potential in p-n junction. We discuss the relationships among excess noise factor (Fe), mean multiplication (Me), and the ionization rate (ks) for this SAM-SAPD. Lastly, make comparisons between the theoretical calculations and the experimental results for Fe vs. Me . In order to prove that the theoretical calculations can fit well with the experimental data, we make the suppositions for the absorption region and the ionization coefficients for each layer of the proposed SAM-SAPD.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Neng-Fu Shih AU - Huei -Ching Huang AU - Chung-Yuan Kung AU - Chun-Chih Chiu AU - Hong Jyh-Wong PY - 2006/10 DA - 2006/10 TI - Excess Noise Factor of a-Si:H/a-SiC:H Separated Absorption and Multiplication Region Superlattice-like Avalanche Photodiodes (SAM-SAPDs) BT - 9th Joint International Conference on Information Sciences (JCIS-06) PB - Atlantis Press SN - 1951-6851 UR - https://doi.org/10.2991/jcis.2006.309 DO - https://doi.org/10.2991/jcis.2006.309 ID - Shih2006/10 ER -