Proceedings of the 21st International Workshop on Computer Science and Information Technologies (CSIT 2019)

The Principles of Forming of the Mathematical Model of Nanoelectronic Components of Quantum Computer Systems with Memresistance Branches

Authors
Andrei Bondarev, Vladimir Efanov
Corresponding Author
Andrei Bondarev
Available Online December 2019.
DOI
10.2991/csit-19.2019.3How to use a DOI?
Keywords
Mathematical model, nanoelectronic components, memristor, quantum computer, multipole, matrix, set of elements.
Abstract

The element base, based on the use of a variety of low-dimensional structures, is the most promising for new generations of electronic technology. However, in the transition to nanometer-scale systems, the quantum-mechanical nature of quasiparticles in a solid begins to manifest itself clearly. As a result, there is a situation when quantum effects begin to play a key role in physical processes in such objects and in the functioning of devices based on them. Since nanoelectronic components are components of modules and units of quantum computing systems, the task arises to study the physical processes and features of circuit design of electronic devices built on the basis of nanoelectronic structures. To this end, it is necessary to develop a generalized structural-parametric model of hybrid radioelectronic systems based on micro-and nanoelectronic components, taking into account the influence of uncertain factors of the external and internal environment, to evaluate the behavior of such complex devices in different operating conditions. In article features of forming of mathematical models of components of quantum computer systems with introduction to structure of the electric multiterminal network of the branches containing a new element of a nanoelectronics - the memristor are considered.

Copyright
© 2019, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 21st International Workshop on Computer Science and Information Technologies (CSIT 2019)
Series
Atlantis Highlights in Computer Sciences
Publication Date
December 2019
ISBN
10.2991/csit-19.2019.3
ISSN
2589-4900
DOI
10.2991/csit-19.2019.3How to use a DOI?
Copyright
© 2019, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Andrei Bondarev
AU  - Vladimir Efanov
PY  - 2019/12
DA  - 2019/12
TI  - The Principles of Forming of the Mathematical Model of Nanoelectronic Components of Quantum Computer Systems with Memresistance Branches
BT  - Proceedings of the 21st International Workshop on Computer Science and Information Technologies (CSIT 2019)
PB  - Atlantis Press
SP  - 17
EP  - 22
SN  - 2589-4900
UR  - https://doi.org/10.2991/csit-19.2019.3
DO  - 10.2991/csit-19.2019.3
ID  - Bondarev2019/12
ER  -