Modeling of Dirac Electron Tunneling Current in Bipolar Transistor Based on Armchair Graphene Nanoribbon Using a Transfer Matrix Method

DOI

10.2991/iccst-15.2015.32How to use a DOI?

Keywords

Armchair graphene nanoribbon, bipolar transistor, dirac electron tunneling current, transfer matrix method

Abstract

The Dirac electron tunneling current in an n-p-n bipolar transistor based on armchair graphene nanoribbon (AGNR) has been modeled. The electron wavefunction was derived by employing the relativistic Dirac equation. The transmittance was derived by using the transfer matrix method (TMM). The Landauer formula was used to calculate the Dirac electron tunneling current. The results showed that various variables such as base-emitter voltage, base-collector voltage and the AGNR width affect the Dirac electron tunneling current. It was found that the Dirac electron tunneling current increases with increasing base-emitter and base-collector voltages. Moreover, the increase in the AGNR width results in the increase in the Dirac electron tunneling current.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Endi Suhendi
AU  - Rifky Syariati
AU  - Fatimah Noor
AU  - Neny Kurniasih
AU  - Khairurrijal
PY  - 2015/01
DA  - 2015/01
TI  - Modeling of Dirac Electron Tunneling Current in Bipolar Transistor Based on Armchair Graphene Nanoribbon Using a Transfer Matrix Method
BT  - Proceedings of the 3rd International Conference on Computation for Science and Technology
PB  - Atlantis Press
SP  - 164
EP  - 166
SN  - 2352-538X
UR  - https://doi.org/10.2991/iccst-15.2015.32
DO  - 10.2991/iccst-15.2015.32
ID  - Suhendi2015/01
ER  -