Simulations of diamond heat spreader for the thermal management of GaN HEMT

DOI

10.2991/icmia-16.2016.34How to use a DOI?

Keywords

diamond heat spreader, thermal management, GaN HEMT

Abstract

A diamond heat spreader has been combined with Si microchannel for the improvement of the hotspots cooling capability for GaN high power electronic devices. The effects of the diamond heat spreader and Si die have been simulated using steady model by finite element analysis. It was found that the diamond spreader can reduce the maximal temperature of GaN device. The effect of thickness of Si die on maximum gate temperature will be increases linearly with the increase of total power. These methodology shows promising way to cool AlGaN/GaN HEMTs on Si.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Shirui Pu
AU  - Wenbo Luo
AU  - Yao Shuai
AU  - Chuangui Wu
AU  - Wanli Zhang
PY  - 2016/11
DA  - 2016/11
TI  - Simulations of diamond heat spreader for the thermal management of GaN HEMT
BT  - Proceedings of the 2016 5th International Conference on Measurement, Instrumentation and Automation (ICMIA 2016)
PB  - Atlantis Press
SP  - 184
EP  - 188
SN  - 1951-6851
UR  - https://doi.org/10.2991/icmia-16.2016.34
DO  - 10.2991/icmia-16.2016.34
ID  - Pu2016/11
ER  -