(paper withdrawn) Simulation of multiple proton implantations field stop IGBT

DOI

10.2991/icmia-16.2016.72How to use a DOI?

Keywords

proton implantation; insulated gate bipolar transistor (IGBT); graded doping; field stop

Abstract

Based on a new buffer layer, the characteristics of multiple proton implantations field stop IGBT ( MPI-FS-IGBT) were simulated and analyzed Different from the conventional field stop IGBT (FS-IGBT) which has an abrupt thin buffer layer and grade-doping field stop IGBT(GFS-IGBT) whose buffer layer was formed by long high temperature diffusion , MPI-FS-IGBT has a 20-30 micrometers buffer layer realized by multiple proton implantations including multiple concentration spikes decreasing systematically. Using Sentaurus TCAD , the on-state switching and short-circuit characteristics of the MPI-FS-IGBT GFS-IGBT and FS-IGBT with ratings of 600 V /40 A were simulated The results show that MPI-FS-IGBT has a lower on-state voltage with same back surface doping, more smooth switching current waveform and longer short circuit withstand time compared to FS-IGBT.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Renfa Huang
AU  - Dongqing Hu
AU  - Yu Wu
AU  - Yunpeng Jia
AU  - Shikai Zou
PY  - 2016/11
DA  - 2016/11
TI  - (paper withdrawn) Simulation of multiple proton implantations field stop IGBT
BT  - Proceedings of the 2016 5th International Conference on Measurement, Instrumentation and Automation (ICMIA 2016)
PB  - Atlantis Press
SN  - 1951-6851
UR  - https://doi.org/10.2991/icmia-16.2016.72
DO  - 10.2991/icmia-16.2016.72
ID  - Huang2016/11
ER  -