Design and Simulation of Low Noise Amplifier in Lower Frequency
Peng Zhao, Fan Li, Jianhui Zhao, Jin Ding
Available Online January 2017.
- https://doi.org/10.2991/icmmita-16.2016.86How to use a DOI?
- low frequency; low noise amplifier; JFET; high gain.
- In order to amplify the output signal of an infrared detector, this paper analyzes the principle of infrared detector and noise characteristics of the amplifier circuit, and based on JFET devices and operational amplifiers a low frequency low noise amplifier is designed. The simulation shows that the gain is as high as 92 dB and the equivalent input noise voltage density within the main frequency is lower than 6.1 nV Hz. This circuit is an ideal circuit of high gain and low noise for sensors with high output impedance especially for the infrared detector..
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Peng Zhao AU - Fan Li AU - Jianhui Zhao AU - Jin Ding PY - 2017/01 DA - 2017/01 TI - Design and Simulation of Low Noise Amplifier in Lower Frequency BT - Proceedings of the 2016 4th International Conference on Machinery, Materials and Information Technology Applications PB - Atlantis Press SP - 465 EP - 468 SN - 2352-538X UR - https://doi.org/10.2991/icmmita-16.2016.86 DO - https://doi.org/10.2991/icmmita-16.2016.86 ID - Zhao2017/01 ER -