Proceedings of the 2016 4th International Conference on Machinery, Materials and Information Technology Applications

Design and Simulation of Low Noise Amplifier in Lower Frequency

Authors
Peng Zhao, Fan Li, Jianhui Zhao, Jin Ding
Corresponding Author
Peng Zhao
Available Online January 2017.
DOI
https://doi.org/10.2991/icmmita-16.2016.86How to use a DOI?
Keywords
low frequency; low noise amplifier; JFET; high gain.
Abstract
In order to amplify the output signal of an infrared detector, this paper analyzes the principle of infrared detector and noise characteristics of the amplifier circuit, and based on JFET devices and operational amplifiers a low frequency low noise amplifier is designed. The simulation shows that the gain is as high as 92 dB and the equivalent input noise voltage density within the main frequency is lower than 6.1 nV Hz. This circuit is an ideal circuit of high gain and low noise for sensors with high output impedance especially for the infrared detector..
Open Access
This is an open access article distributed under the CC BY-NC license.

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Cite this article

TY  - CONF
AU  - Peng Zhao
AU  - Fan Li
AU  - Jianhui Zhao
AU  - Jin Ding
PY  - 2017/01
DA  - 2017/01
TI  - Design and Simulation of Low Noise Amplifier in Lower Frequency
BT  - Proceedings of the 2016 4th International Conference on Machinery, Materials and Information Technology Applications
PB  - Atlantis Press
SP  - 465
EP  - 468
SN  - 2352-538X
UR  - https://doi.org/10.2991/icmmita-16.2016.86
DO  - https://doi.org/10.2991/icmmita-16.2016.86
ID  - Zhao2017/01
ER  -