AlNGaN HEMT T- gate Optimal Design
Xiaowei Zhang, Kejin Jia, Yuangang Wang, Zhihong Feng, Zhengping Zhao
Available Online February 2013.
- https://doi.org/10.2991/isccca.2013.213How to use a DOI?
- frequency characteristics, GaN HEMT , T-gate size, Simulation model
- The GaN HEMT is widely used in high-frequency aspects, use the T-gate to reduce gate resistance is one of the most effective methods to improve the the device maximum oscillation frequency (fmax). But fmax is very sensitive to T-gate size, improper selection may reduce fmax, Therefore, in order to reduce the cost of production, it is necessary to select appropriate simulation T-gate size. We have worked out AlGaN/GaN HEMT with gate length of 0.17 m and fmax values 110GHz. Accuracy of the simulation model is verified by experiment. Then detailed simulates the impact of the T-gate size and we obtain ptimized T-gate size range.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Xiaowei Zhang AU - Kejin Jia AU - Yuangang Wang AU - Zhihong Feng AU - Zhengping Zhao PY - 2013/02 DA - 2013/02 TI - AlNGaN HEMT T- gate Optimal Design BT - Proceedings of the 2nd International Symposium on Computer, Communication, Control and Automation (ISCCCA 2013) PB - Atlantis Press SP - 845 EP - 847 SN - 1951-6851 UR - https://doi.org/10.2991/isccca.2013.213 DO - https://doi.org/10.2991/isccca.2013.213 ID - Zhang2013/02 ER -