Effects of substrate temperature on graphene grown on Ni foil via atmospheric pressure chemical vapor deposition
Qunfei Zou, Guangzhi Yin, Yueliang Gu, Deming Xie
Available Online October 2015.
- 10.2991/iwmecs-15.2015.61How to use a DOI?
- Graphene;APCVD;X-ray diffraction;growth mechanism.
Multilayer graphene was grown on Ni foil(30µm) via atmospheric pressure chemical vapor deposition (APCVD) at different temperature of 800 ,900 ,1000 , we observe structural difference between the three process by in situ X-ray diffraction and Raman measurements, our experimental results show that temperature plays an important role on graphene growth, the growth rate is increased with the increasing temperature. Moreover, we found that at growth temperature of 900 , graphene has the best quality. These results will be helpful to better understanding the growth mechanism in the graphene growth process.
- © 2015, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Qunfei Zou AU - Guangzhi Yin AU - Yueliang Gu AU - Deming Xie PY - 2015/10 DA - 2015/10 TI - Effects of substrate temperature on graphene grown on Ni foil via atmospheric pressure chemical vapor deposition BT - Proceedings of the 2015 2nd International Workshop on Materials Engineering and Computer Sciences PB - Atlantis Press SP - 313 EP - 316 SN - 2352-538X UR - https://doi.org/10.2991/iwmecs-15.2015.61 DO - 10.2991/iwmecs-15.2015.61 ID - Zou2015/10 ER -