Multi-Parameter Fluctuation Effects on InGaAsP/InP Geiger-Mode Avalanche Photodiodes

DOI

10.2991/jimet-15.2015.179How to use a DOI?

Keywords

Optoelectronic device, avalanche photodiode, single photon avalanche diode.

Abstract

For Geiger-mode avalanche photodiodes, a statistical method is advanced to establish the quantitative correlation between the controllability of structure parameters and the homogeneity of device properties. Setting many parameters fluctuating independently and simultaneously, the collective effect of multi-parameters can be straightly obtained. For a typical InGaAsP/InP singlephoton avalanche diode, it is seen that device homogeneity with excess bias fluctuation within 50% requires uncertainty in layer thickness and doping level better than ~3%.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Download article (PDF)

TY  - CONF
AU  - Qian Dai
AU  - Jie Deng
AU  - Zhu Shi
AU  - Li-bo Yu
AU  - Hai-zhi Song
PY  - 2015/12
DA  - 2015/12
TI  - Multi-Parameter Fluctuation Effects on InGaAsP/InP Geiger-Mode Avalanche Photodiodes
BT  - Proceedings of the 2015 Joint International Mechanical, Electronic and Information Technology Conference
PB  - Atlantis Press
SP  - 963
EP  - 966
SN  - 2352-538X
UR  - https://doi.org/10.2991/jimet-15.2015.179
DO  - 10.2991/jimet-15.2015.179
ID  - Dai2015/12
ER  -