Theory Research on the Solar Cell Martial of GaN by a Novel Method
Fengqi Quan, Hongyu Zhang, Peiyuan Cong, Haijun Yu, Hao Huang
Available Online March 2014.
- https://doi.org/10.2991/mce-14.2014.151How to use a DOI?
- Solar cell; GaN; Strain; optical; SiNx
- Solar cell material GaN films were grown on 6H-SiC by metalorganic chemical vapor deposition (MOCVD). An in situ SiNx interlayer was employed during the growth process, which acted as a nano-mask to promote epitaxial lateral overgrowth. The threading dislocations (TDs) density in the films may be reduced to 1.7×108 cm 2 by the SiNx interlayer. The TD reduction method relies on the formation of facetted islands on the SiNx-treated GaN surface. Some TDs bend to the facets of GaN islands, some TDs with an opposite Burgers vector could be annihilated when bending over by 90° and forming half-loops after reacting with each other at the interface. The improvement of surface morphology, optical quality and train relaxation were achieved by the SiNx interlayer also.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Fengqi Quan AU - Hongyu Zhang AU - Peiyuan Cong AU - Haijun Yu AU - Hao Huang PY - 2014/03 DA - 2014/03 TI - Theory Research on the Solar Cell Martial of GaN by a Novel Method BT - Proceedings of the 2014 International Conference on Mechatronics, Control and Electronic Engineering PB - Atlantis Press SP - 675 EP - 678 SN - 1951-6851 UR - https://doi.org/10.2991/mce-14.2014.151 DO - https://doi.org/10.2991/mce-14.2014.151 ID - Quan2014/03 ER -