Proceedings of the 2014 International Conference on Mechatronics, Control and Electronic Engineering

Theory Research on the Solar Cell Martial of GaN by a Novel Method

Authors
Fengqi Quan, Hongyu Zhang, Peiyuan Cong, Haijun Yu, Hao Huang
Corresponding Author
Fengqi Quan
Available Online March 2014.
DOI
https://doi.org/10.2991/mce-14.2014.151How to use a DOI?
Keywords
Solar cell; GaN; Strain; optical; SiNx
Abstract
Solar cell material GaN films were grown on 6H-SiC by metalorganic chemical vapor deposition (MOCVD). An in situ SiNx interlayer was employed during the growth process, which acted as a nano-mask to promote epitaxial lateral overgrowth. The threading dislocations (TDs) density in the films may be reduced to 1.7×108 cm 2 by the SiNx interlayer. The TD reduction method relies on the formation of facetted islands on the SiNx-treated GaN surface. Some TDs bend to the facets of GaN islands, some TDs with an opposite Burgers vector could be annihilated when bending over by 90° and forming half-loops after reacting with each other at the interface. The improvement of surface morphology, optical quality and train relaxation were achieved by the SiNx interlayer also.
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Proceedings
2014 International Conference on Mechatronics, Control and Electronic Engineering (MCE-14)
Part of series
Advances in Intelligent Systems Research
Publication Date
March 2014
ISBN
978-94-62520-31-8
ISSN
1951-6851
DOI
https://doi.org/10.2991/mce-14.2014.151How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - Fengqi Quan
AU  - Hongyu Zhang
AU  - Peiyuan Cong
AU  - Haijun Yu
AU  - Hao Huang
PY  - 2014/03
DA  - 2014/03
TI  - Theory Research on the Solar Cell Martial of GaN by a Novel Method
BT  - 2014 International Conference on Mechatronics, Control and Electronic Engineering (MCE-14)
PB  - Atlantis Press
SP  - 675
EP  - 678
SN  - 1951-6851
UR  - https://doi.org/10.2991/mce-14.2014.151
DO  - https://doi.org/10.2991/mce-14.2014.151
ID  - Quan2014/03
ER  -