Proceedings of the Conference on Advances in Communication and Control Systems-2013

Simulation of Recessed-Gate AlGaN-GaN DH-HEMT for Power Electronics Applications

Authors
YASHVIR SINGH, MOHIT PAYAL
Corresponding Author
YASHVIR SINGH
Available Online April 2013.
Abstract
The e ects of gate-recessing on the performance parameters in AlGaN/GaN/AlGaN double-heterojunction high electron amobility transistor are presented. The accuracy of simulations is veri ed by comparing the simulated characteristics with the reported measured data. The results show that a 12nm gate- recessed AlGaN/GaN/AlGaN DH-HEMT provides a 61% reduction in threshold voltage, 20% increase in transconductance, 43% improvement in cut-o frequency and seven times improvement in breakdown voltage at the cost of 44% reduction in drain current compared to the device without gate-recess.
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Proceedings
Proceedings of the Conference on Advances in Communication and Control Systems-2013
Part of series
Advances in Intelligent Systems Research
Publication Date
April 2013
ISBN
978-90-78677-66-6
ISSN
1951-6851
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - YASHVIR SINGH
AU  - MOHIT PAYAL
PY  - 2013/04
DA  - 2013/04
TI  - Simulation of Recessed-Gate AlGaN-GaN DH-HEMT for Power Electronics Applications
BT  - Proceedings of the Conference on Advances in Communication and Control Systems-2013
PB  - Atlantis Press
SN  - 1951-6851
UR  - https://www.atlantis-press.com/article/6308
ID  - SINGH2013/04
ER  -