Simulation of Recessed-Gate AlGaN-GaN DH-HEMT for Power Electronics Applications
YASHVIR SINGH, MOHIT PAYAL
Available Online April 2013.
- The e ects of gate-recessing on the performance parameters in AlGaN/GaN/AlGaN double-heterojunction high electron amobility transistor are presented. The accuracy of simulations is veri ed by comparing the simulated characteristics with the reported measured data. The results show that a 12nm gate- recessed AlGaN/GaN/AlGaN DH-HEMT provides a 61% reduction in threshold voltage, 20% increase in transconductance, 43% improvement in cut-o frequency and seven times improvement in breakdown voltage at the cost of 44% reduction in drain current compared to the device without gate-recess.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - YASHVIR SINGH AU - MOHIT PAYAL PY - 2013/04 DA - 2013/04 TI - Simulation of Recessed-Gate AlGaN-GaN DH-HEMT for Power Electronics Applications BT - Proceedings of the Conference on Advances in Communication and Control Systems (CAC2S 2013) PB - Atlantis Press SP - 222 EP - 226 SN - 1951-6851 UR - https://www.atlantis-press.com/article/6308 ID - SINGH2013/04 ER -