Proceedings of the 2016 International Conference on Computer Science and Electronic Technology

Electron Mobility Degradation Due to Remote Coulomb Scattering in Ge MOSFET

Authors
Haoyu Xu, Jing Zhang, Shuhua Wei, Xiaolei Wang, Wenwu Wang
Corresponding Author
Haoyu Xu
Available Online August 2016.
DOI
https://doi.org/10.2991/cset-16.2016.72How to use a DOI?
Keywords
Ge, mobility, remote coulomb scatterings
Abstract
Remote Coulomb scatterings (RCS) on electron mobility degradation are experimentally investigated in Ge based metal-oxide-semiconductor field-effect-transistor (MOSFETs) with GeOx/Al2O3 gate stacks. The mobility is found increased with thicker GeOx (7.8-20.8 ). The physical origin of this mobility dependence on GeOx thickness is explored. The following factors are excluded: Coulomb scattering due to interfacial traps at GeOx/Ge, phonon scattering, and surface roughness scattering. Therefore, the RCS from charges in gate stacks are studied. The charge distributions in GeOx/Al2O3 gate stacks are experimentally evaluated. The bulk charges in Al2O3 and GeOx are found negligible. The density of interfacial charge is +3.2ž1012 cm-2 at GeOx/Ge interface, and -2.3ž1012 cm-2 at Al2O3/GeOx interface. The electric dipole at Al2O3/GeOx interface is found +0.15 V, corresponding to areal charge density of 1.9ž1013 cm-2. The origin of this mobility dependence on GeOx thickness is attributed to the RCS due to electric dipole at Al2O3/GeOx interface. And this remote dipole scattering is found to play a significant role on mobility degradation. The discovery of this new scattering mechanism indicates that engineering of Al2O3/GeOx interface is key for mobility enhancement and device performance improvement. These results are helpful for understanding and engineering the Ge mobility enhancement.
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This is an open access article distributed under the CC BY-NC license.

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Proceedings
2016 International Conference on Computer Science and Electronic Technology
Part of series
Advances in Computer Science Research
Publication Date
August 2016
ISBN
978-94-6252-213-8
ISSN
2352-538X
DOI
https://doi.org/10.2991/cset-16.2016.72How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - Haoyu Xu
AU  - Jing Zhang
AU  - Shuhua Wei
AU  - Xiaolei Wang
AU  - Wenwu Wang
PY  - 2016/08
DA  - 2016/08
TI  - Electron Mobility Degradation Due to Remote Coulomb Scattering in Ge MOSFET
BT  - 2016 International Conference on Computer Science and Electronic Technology
PB  - Atlantis Press
SP  - 310
EP  - 313
SN  - 2352-538X
UR  - https://doi.org/10.2991/cset-16.2016.72
DO  - https://doi.org/10.2991/cset-16.2016.72
ID  - Xu2016/08
ER  -