Proceedings of the 2016 International Conference on Computer Science and Electronic Technology

Investigation on the Dominant Key to Achieve Superior Ge Surface Passivation by GeOx Based on the Ozone Oxidation

Authors
Jie Zhang, Shuhua Wei, Jing Zhang, Xiaolei Wang, Wenwu Wang
Corresponding Author
Jie Zhang
Available Online August 2016.
DOI
https://doi.org/10.2991/cset-16.2016.73How to use a DOI?
Keywords
Ge, MOS, XPS, interface trap density, passivation
Abstract
The dominant key to achieve superior Ge surface passivation by GeOx interfacial layer is investigated based on ozone oxidation. The interface state density (Dit) measured from low temperature conduction method is found to decrease with increasing the GeOx thickness (0.26-1.06 nm). The X-ray photoelectron spectroscopy (XPS) is employed to demonstrate the interfacial structure of GeOx/Ge with different GeOx thicknesses. And the XPS results show that Ge3+ oxide component is responsible to the decrease of the Dit due to the effective passivation of Ge dangling bonds. Therefore, the formation of Ge3+ component is the dominant key to achieve low Dit for Ge gate stacks. Our work confirms that the same physical mechanism determines the Ge surface passivation by the GeOx regardless of the oxidation methods to grow the GeOx interfacial layer. As a result, to explore a growth process that can realize sufficient Ge3+ component in the GeOx interlayer as thin as possible is important to achieve both equivalent oxide thickness scaling and superior interfacial property simultaneously. This conclusion is helpful to engineer the optimization of the Ge gate stacks.
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This is an open access article distributed under the CC BY-NC license.

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Proceedings
2016 International Conference on Computer Science and Electronic Technology
Part of series
Advances in Computer Science Research
Publication Date
August 2016
ISBN
978-94-6252-213-8
ISSN
2352-538X
DOI
https://doi.org/10.2991/cset-16.2016.73How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - Jie Zhang
AU  - Shuhua Wei
AU  - Jing Zhang
AU  - Xiaolei Wang
AU  - Wenwu Wang
PY  - 2016/08
DA  - 2016/08
TI  - Investigation on the Dominant Key to Achieve Superior Ge Surface Passivation by GeOx Based on the Ozone Oxidation
BT  - 2016 International Conference on Computer Science and Electronic Technology
PB  - Atlantis Press
SP  - 314
EP  - 317
SN  - 2352-538X
UR  - https://doi.org/10.2991/cset-16.2016.73
DO  - https://doi.org/10.2991/cset-16.2016.73
ID  - Zhang2016/08
ER  -