Eigenenergies of a Nanoscale Symmetric Double Triangular Quantum Well in Double Gate InAlAs/InGaAs HEMT

DOI

10.2991/eeic-13.2013.4How to use a DOI?

Keywords

double gate HEMT; double triangular quantum well (DTQW); eigenenergies; symmetric; Schrodinger equation

Abstract

This paper presents the analytical calculation of the eigenenergies for a nanoscale symmetric double triangular quantum well (DTQW) in double gate InAlAs/InGaAs HEMT. The symmetric double triangular quantum wells formed by two similar heterostructures are separated by a barrier in the InGaAs channel. The paper accounts for the quantization effects by solving a one-dimensional (1D) time-independent Schrodinger equation in the nanoscale channel at equilibrium i.e. when no gate voltage is applied. In particular, the ground and first excited energy levels are numerically calculated which represent the lowest populated sub-bands.

Copyright

© 2013, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Download article (PDF)

TY  - CONF
AU  - Neha Verma
AU  - Jyotika Jogi
AU  - Enakshi Khular Sharma
PY  - 2013/12
DA  - 2013/12
TI  - Eigenenergies of a Nanoscale Symmetric Double Triangular Quantum Well in Double Gate InAlAs/InGaAs HEMT
BT  - Proceedings of the 3rd International Conference on Electric and Electronics
PB  - Atlantis Press
SP  - 14
EP  - 16
SN  - 1951-6851
UR  - https://doi.org/10.2991/eeic-13.2013.4
DO  - 10.2991/eeic-13.2013.4
ID  - Verma2013/12
ER  -