Improvement on the Si/PEDOT:PSS hybrid solar cells by rear-sided passivation with SiNx:H layers
Authors
Yiling Sun, Jichun Ye, Pingqi Gao, Yong Xiang
Corresponding Author
Yiling Sun
Available Online August 2016.
- DOI
- 10.2991/emcpe-16.2016.61How to use a DOI?
- Keywords
- Si/PEDOT:PSS, hybrid solar cells, SiNx:H passivation.
- Abstract
A patterned silicon nitride (SiNx:H) passivation layer was employed to improve the performance of silicon/poly(3,4-ethylenedioxythiophene):poly(stylenesulfonate) (Si/PEDOT:PSS) hybrid solar cells, achieving of an enhancement in the power conversion efficiency (PCE) of 0.6%. The insertion of patterned SiNx:H layer with a 80% SiNx:H-to-substrate ratio boosted the open circuit voltage (Voc) from 523.1 mV to 573.4 mV, suggesting the well-passivation property of the patterned SiNx:H thin layer that was created by plasma enhanced chemical vapor deposition and lithography processes.
- Copyright
- © 2016, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Yiling Sun AU - Jichun Ye AU - Pingqi Gao AU - Yong Xiang PY - 2016/08 DA - 2016/08 TI - Improvement on the Si/PEDOT:PSS hybrid solar cells by rear-sided passivation with SiNx:H layers BT - Proceedings of the 2016 5th International Conference on Environment, Materials, Chemistry and Power Electronics PB - Atlantis Press SP - 290 EP - 293 SN - 2352-5401 UR - https://doi.org/10.2991/emcpe-16.2016.61 DO - 10.2991/emcpe-16.2016.61 ID - Sun2016/08 ER -