Temperature Measurement and Numerical Simulation of Semiconductor Bridge in Constant Current
- 10.2991/emeit.2012.26How to use a DOI?
- Semiconductor Bridge, Steady-state Model, Infrared Thermal Imaging, Safety, Electro-explosive Devices
The temperature of electric initiating device under constant current has the vital significance to security and firing performance of electrical explosive initiator. Semiconductor bridge which is representative in electrical explosive devices has been widely used for excellent performances. In this study, the heavily doped polysilicon thin film was chosen as semiconductor bridge. Temperature changes of semiconductor bridge under different currents were measured using the infrared microscopic thermographer. The experimental results show that the maximum temperature of semiconductor bridge ascends while current rises from 0.70 A to 0.90 A. Based on the data analysis of infrared temperature measurement, steady-state mathematical model of semiconductor bridge was established. Through consumed time and temperature at thermodynamic equilibrium, the thermal conductivity and heat capacity of semiconductor bridge were determined and the simplified formula was obtained. Then the simulation curve of temperature changes at different current is generated by corresponding calculation procedure. The simulated curve is in good agreement with experimental results.
- © 2012, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Wenchao Zhang AU - Xiaowei Wang AU - Guihua Wang AU - Baoqing Yin PY - 2012/09 DA - 2012/09 TI - Temperature Measurement and Numerical Simulation of Semiconductor Bridge in Constant Current BT - Proceedings of the 2nd International Conference on Electronic & Mechanical Engineering and Information Technology (EMEIT 2012) PB - Atlantis Press SP - 133 EP - 138 SN - 1951-6851 UR - https://doi.org/10.2991/emeit.2012.26 DO - 10.2991/emeit.2012.26 ID - Zhang2012/09 ER -