Proceedings of the 6th International Conference on Electronic, Mechanical, Information and Management Society

Aluminum Nitride Wide Band-gap Semiconductor and Its Basic Characteristics

Authors
Xinru Fu
Corresponding Author
Xinru Fu
Available Online April 2016.
DOI
https://doi.org/10.2991/emim-16.2016.117How to use a DOI?
Keywords
Aluminum nitride; Band-gap semiconductor; Characteristic; Production; Application
Abstract
Aluminum nitride is wide and direct band gap compound semiconductor material. High temperature strength, good thermal conductivity, small thermal expansion coefficient, strong corrosion resistance, good dielectric properties and other characteristics make aluminum nitride as impact resistance material, crucible materials, and conductive materials widely applied in various fields. This paper reviews the production method of aluminum nitride powder and its application in different fields.
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Proceedings
6th International Conference on Electronic, Mechanical, Information and Management Society
Part of series
Advances in Computer Science Research
Publication Date
April 2016
ISBN
978-94-6252-176-6
ISSN
2352-538X
DOI
https://doi.org/10.2991/emim-16.2016.117How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - Xinru Fu
PY  - 2016/04
DA  - 2016/04
TI  - Aluminum Nitride Wide Band-gap Semiconductor and Its Basic Characteristics
BT  - 6th International Conference on Electronic, Mechanical, Information and Management Society
PB  - Atlantis Press
SP  - 555
EP  - 558
SN  - 2352-538X
UR  - https://doi.org/10.2991/emim-16.2016.117
DO  - https://doi.org/10.2991/emim-16.2016.117
ID  - Fu2016/04
ER  -