Proceedings of the 2017 5th International Conference on Frontiers of Manufacturing Science and Measuring Technology (FMSMT 2017)

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Total dose effect in NMOS devices

Authors
Dantong Liu
Corresponding Author
Dantong Liu
Available Online April 2017.
DOI
10.2991/fmsmt-17.2017.112How to use a DOI?
Keywords
total dose effect electron-hole pairs, threshold voltage drifting, leakage tunnel
Abstract

When electronic components work under irradiation condition, total dose effect would be engendered. In order to weaken total dose effect on components, the author set NMOS transistor which are a section of the components as an example to study on the principle of the production process of total dose effect as well as the influence on the working NMOS devices.

Copyright
© 2017, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 2017 5th International Conference on Frontiers of Manufacturing Science and Measuring Technology (FMSMT 2017)
Series
Advances in Engineering Research
Publication Date
April 2017
ISBN
10.2991/fmsmt-17.2017.112
ISSN
2352-5401
DOI
10.2991/fmsmt-17.2017.112How to use a DOI?
Copyright
© 2017, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

risenwbib
TY  - CONF
AU  - Dantong Liu
PY  - 2017/04
DA  - 2017/04
TI  - Total dose effect in NMOS devices
BT  - Proceedings of the 2017 5th International Conference on Frontiers of Manufacturing Science and Measuring Technology (FMSMT 2017)
PB  - Atlantis Press
SP  - 550
EP  - 554
SN  - 2352-5401
UR  - https://doi.org/10.2991/fmsmt-17.2017.112
DO  - 10.2991/fmsmt-17.2017.112
ID  - Liu2017/04
ER  -