A Low Power and High Accuracy Threshold Voltage Detection Circuit for Flash Memory

DOI

10.2991/fmsmt-17.2017.115How to use a DOI?

Keywords

Low power, High accuracy, Circuit, Flash memory

Abstract

A low power threshold voltage detection circuit and its accuracy optimization method for NOR flash memory are proposed in this paper. The whole circuit system is composed of data path, ramp voltage generator, and other auxiliary circuits. This memory system with 256Mb cells is simulated in a 65nm 2P3M NOR flash memory process. The simulation results show that the proposed circuit and optimization method achieve low power consumption with a relatively high accuracy.

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Da Huang
AU  - Dong Wu
AU  - Qi Liu
PY  - 2017/04
DA  - 2017/04
TI  - A Low Power and High Accuracy Threshold Voltage Detection Circuit for Flash Memory
BT  - Proceedings of the 2017 5th International Conference on Frontiers of Manufacturing Science and Measuring Technology (FMSMT 2017)
PB  - Atlantis Press
SP  - 569
EP  - 572
SN  - 2352-5401
UR  - https://doi.org/10.2991/fmsmt-17.2017.115
DO  - 10.2991/fmsmt-17.2017.115
ID  - Huang2017/04
ER  -