An SEU Hardened 65nm/4T-SRAM Cell for High Reliable Space Applications
Authors
Wendi Zhang, Liyang Pan
Corresponding Author
Wendi Zhang
Available Online April 2017.
- DOI
- 10.2991/fmsmt-17.2017.126How to use a DOI?
- Keywords
- SEU, High reliable space
- Abstract
A novel mono-stable 4T-SRAM cell is proposed in this paper. The cell is designed in 65nm LPCMOS process and simulated to find out the linear energy transfer threshold of SEU. T-CAD simulation results show that its LETth for data(1) is up to 41.6 MeV/mg/cm2, almost the same as DICE, and the data error rate can be reduce to 1.2ž10-11/bit.day with a particular duplication redundancy SRAM structure. The proposed 4T cell takes advantage of small cell size and solid anit-SEU ability, showing good potential to be used in SEU hardened SRAM.
- Copyright
- © 2017, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Wendi Zhang AU - Liyang Pan PY - 2017/04 DA - 2017/04 TI - An SEU Hardened 65nm/4T-SRAM Cell for High Reliable Space Applications BT - Proceedings of the 2017 5th International Conference on Frontiers of Manufacturing Science and Measuring Technology (FMSMT 2017) PB - Atlantis Press SP - 635 EP - 638 SN - 2352-5401 UR - https://doi.org/10.2991/fmsmt-17.2017.126 DO - 10.2991/fmsmt-17.2017.126 ID - Zhang2017/04 ER -