Proceedings of the 3rd International Conference on Material, Mechanical and Manufacturing Engineering

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A physics-based electro-thermal model for FS IGBT

Authors
Yu Cheng, Guicui Fu
Corresponding Author
Yu Cheng
Available Online August 2015.
DOI
10.2991/ic3me-15.2015.214How to use a DOI?
Keywords
FS IGBT, electro-thermal model, Fourier-based, RC network
Abstract

A physics-based electro-thermal model implemented in the Matlab/Simulink is introduced for FS (field stop) IGBT (Insulated Gate Bipolar Transistor) in this paper. The model consists of Fourier-based FS IGBT model and equivalent RC thermal network model. The static testing of a commercial IGBT is performed to validate the model. The comparison between the simulation and experiment results proves the accuracy and efficiency of the model.

Copyright
© 2015, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 3rd International Conference on Material, Mechanical and Manufacturing Engineering
Series
Advances in Engineering Research
Publication Date
August 2015
ISBN
10.2991/ic3me-15.2015.214
ISSN
2352-5401
DOI
10.2991/ic3me-15.2015.214How to use a DOI?
Copyright
© 2015, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

risenwbib
TY  - CONF
AU  - Yu Cheng
AU  - Guicui Fu
PY  - 2015/08
DA  - 2015/08
TI  - A physics-based electro-thermal model for FS IGBT
BT  - Proceedings of the 3rd International Conference on Material, Mechanical and Manufacturing Engineering
PB  - Atlantis Press
SP  - 1107
EP  - 1111
SN  - 2352-5401
UR  - https://doi.org/10.2991/ic3me-15.2015.214
DO  - 10.2991/ic3me-15.2015.214
ID  - Cheng2015/08
ER  -