Development of High Temperature Pressure Sensor for Oil and Gas Field Based on SOI
Yong Chen, Xiaohong Bai, Shuqin Xiao
Available Online August 2015.
- https://doi.org/10.2991/ic3me-15.2015.274How to use a DOI?
- high temperature pressure sensor; silicon on insulator; anodic bonding; corrugated diaphragm; packaging
- According to the pressure testing requirements under high temperature and high pressure environment in oil and gas field, this paper introduced the design and development of a kind of high temperature high pressure sensor chip, and solved the problems of thermal stability of traditional piezoresistive sensors in special environment. The method of packaging SOI piezoresistive chip of high temperature resistance and glass plate in one through technology of anodic bonding under circumstance of vacuum, solved the problem of wide measurement range of pressure under high temperature circumstance. Meanwhile, insulating the medium under investigation from sensor chips by adopting corrugated diaphragm and high-temperature silicon oil as isolation materials, improved the adaptability of sensors.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Yong Chen AU - Xiaohong Bai AU - Shuqin Xiao PY - 2015/08 DA - 2015/08 TI - Development of High Temperature Pressure Sensor for Oil and Gas Field Based on SOI BT - 3rd International Conference on Material, Mechanical and Manufacturing Engineering (IC3ME 2015) PB - Atlantis Press SN - 2352-5401 UR - https://doi.org/10.2991/ic3me-15.2015.274 DO - https://doi.org/10.2991/ic3me-15.2015.274 ID - Chen2015/08 ER -