Proceedings of the 3rd International Conference on Material, Mechanical and Manufacturing Engineering

Development of High Temperature Pressure Sensor for Oil and Gas Field Based on SOI

Authors
Yong Chen, Xiaohong Bai, Shuqin Xiao
Corresponding Author
Yong Chen
Available Online August 2015.
DOI
https://doi.org/10.2991/ic3me-15.2015.274How to use a DOI?
Keywords
high temperature pressure sensor; silicon on insulator; anodic bonding; corrugated diaphragm; packaging
Abstract
According to the pressure testing requirements under high temperature and high pressure environment in oil and gas field, this paper introduced the design and development of a kind of high temperature high pressure sensor chip, and solved the problems of thermal stability of traditional piezoresistive sensors in special environment. The method of packaging SOI piezoresistive chip of high temperature resistance and glass plate in one through technology of anodic bonding under circumstance of vacuum, solved the problem of wide measurement range of pressure under high temperature circumstance. Meanwhile, insulating the medium under investigation from sensor chips by adopting corrugated diaphragm and high-temperature silicon oil as isolation materials, improved the adaptability of sensors.
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Proceedings
3rd International Conference on Material, Mechanical and Manufacturing Engineering (IC3ME 2015)
Part of series
Advances in Engineering Research
Publication Date
August 2015
ISBN
978-94-6252-100-1
ISSN
2352-5401
DOI
https://doi.org/10.2991/ic3me-15.2015.274How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - Yong Chen
AU  - Xiaohong Bai
AU  - Shuqin Xiao
PY  - 2015/08
DA  - 2015/08
TI  - Development of High Temperature Pressure Sensor for Oil and Gas Field Based on SOI
BT  - 3rd International Conference on Material, Mechanical and Manufacturing Engineering (IC3ME 2015)
PB  - Atlantis Press
SN  - 2352-5401
UR  - https://doi.org/10.2991/ic3me-15.2015.274
DO  - https://doi.org/10.2991/ic3me-15.2015.274
ID  - Chen2015/08
ER  -