The thermoelectric properties of In2O3 thin films deposited by direct current magnetron sputtering
Fan Ye, Xiao-Qiang Su, Xing-Min Cai, Huan Wang, Zhuang-Hao Zheng, Guang-Xing Liang, Ping Fan, Dong-Ping Zhang, Jing-Ting Luo
Available Online August 2015.
- https://doi.org/10.2991/ic3me-15.2015.370How to use a DOI?
- thin film; In2O3; thermoelectric; sputtering
- In2O3 films were deposited on K9 glass by direct current magnetron sputtering with different oxygen partial pressure percentage. It is found that the films have a body-centered cubic structure, a relatively high transmission in the visible range and an optical band gap of around 3.75 eV. The conductivity of the films increases with the temperature increase up to around 470K due to the increase in the carrier concentration and then decreases due to scattering. The films are n-type and the absolute value of the Seebeck coefficient increases nearly linearly with the increase in the test temperature. The power factor of the films also roughly increases with the increase in the test temperature. It is found that oxygen partial pressure percentage has an effect on defects, electron density and Fermi level position. The films deposited with the oxygen partial pressure percentage of 80% have the best thermoelectric properties.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Fan Ye AU - Xiao-Qiang Su AU - Xing-Min Cai AU - Huan Wang AU - Zhuang-Hao Zheng AU - Guang-Xing Liang AU - Ping Fan AU - Dong-Ping Zhang AU - Jing-Ting Luo PY - 2015/08 DA - 2015/08 TI - The thermoelectric properties of In2O3 thin films deposited by direct current magnetron sputtering BT - 3rd International Conference on Material, Mechanical and Manufacturing Engineering (IC3ME 2015) PB - Atlantis Press SN - 2352-5401 UR - https://doi.org/10.2991/ic3me-15.2015.370 DO - https://doi.org/10.2991/ic3me-15.2015.370 ID - Ye2015/08 ER -