Proceedings of the 3rd International Conference on Material, Mechanical and Manufacturing Engineering

The thermoelectric properties of In2O3 thin films deposited by direct current magnetron sputtering

Authors
Fan Ye, Xiao-Qiang Su, Xing-Min Cai, Huan Wang, Zhuang-Hao Zheng, Guang-Xing Liang, Ping Fan, Dong-Ping Zhang, Jing-Ting Luo
Corresponding Author
Fan Ye
Available Online August 2015.
DOI
https://doi.org/10.2991/ic3me-15.2015.370How to use a DOI?
Keywords
thin film; In2O3; thermoelectric; sputtering
Abstract
In2O3 films were deposited on K9 glass by direct current magnetron sputtering with different oxygen partial pressure percentage. It is found that the films have a body-centered cubic structure, a relatively high transmission in the visible range and an optical band gap of around 3.75 eV. The conductivity of the films increases with the temperature increase up to around 470K due to the increase in the carrier concentration and then decreases due to scattering. The films are n-type and the absolute value of the Seebeck coefficient increases nearly linearly with the increase in the test temperature. The power factor of the films also roughly increases with the increase in the test temperature. It is found that oxygen partial pressure percentage has an effect on defects, electron density and Fermi level position. The films deposited with the oxygen partial pressure percentage of 80% have the best thermoelectric properties.
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Proceedings
3rd International Conference on Material, Mechanical and Manufacturing Engineering (IC3ME 2015)
Part of series
Advances in Engineering Research
Publication Date
August 2015
ISBN
978-94-6252-100-1
ISSN
2352-5401
DOI
https://doi.org/10.2991/ic3me-15.2015.370How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - Fan Ye
AU  - Xiao-Qiang Su
AU  - Xing-Min Cai
AU  - Huan Wang
AU  - Zhuang-Hao Zheng
AU  - Guang-Xing Liang
AU  - Ping Fan
AU  - Dong-Ping Zhang
AU  - Jing-Ting Luo
PY  - 2015/08
DA  - 2015/08
TI  - The thermoelectric properties of In2O3 thin films deposited by direct current magnetron sputtering
BT  - 3rd International Conference on Material, Mechanical and Manufacturing Engineering (IC3ME 2015)
PB  - Atlantis Press
SN  - 2352-5401
UR  - https://doi.org/10.2991/ic3me-15.2015.370
DO  - https://doi.org/10.2991/ic3me-15.2015.370
ID  - Ye2015/08
ER  -