Proceedings of the 5th International Conference on Advanced Design and Manufacturing Engineering

Thin HfSiN Films prepared by Magnetron Sputtering

Authors
Zaiyu Zhang, Yilong Liang, Xianbang Jiang
Corresponding Author
Zaiyu Zhang
Available Online October 2015.
DOI
https://doi.org/10.2991/icadme-15.2015.74How to use a DOI?
Keywords
HfSiN thin films; magnetic sputtering; HfSiN/Cu/HfSiN/SiO2/Si
Abstract
HfSiN thin films were prepared by the solid solution of HfN and SiN precursor films through magnetron sputtering. The obtained films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). X-ray diffraction(XRD) measurements show that the films have amorphous structure in the as-deposited state. Scanning electronic microscopy (SEM) images show that crystalline grain size of the films increases with the annealing temperature. The results show that the resistivity and the components of the HfSiN/Cu/ HfSiN/SiO2/Si film do not have obvious change after being annealing at 550 in oxygen, and the HfSiN film can provide good barrier performance for copper wire.
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Volume Title
Proceedings of the 5th International Conference on Advanced Design and Manufacturing Engineering
Series
Advances in Engineering Research
Publication Date
October 2015
ISBN
978-94-6252-113-1
ISSN
2352-5401
DOI
https://doi.org/10.2991/icadme-15.2015.74How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - Zaiyu Zhang
AU  - Yilong Liang
AU  - Xianbang Jiang
PY  - 2015/10
DA  - 2015/10
TI  - Thin HfSiN Films prepared by Magnetron Sputtering
BT  - Proceedings of the 5th International Conference on Advanced Design and Manufacturing Engineering
PB  - Atlantis Press
SP  - 371
EP  - 374
SN  - 2352-5401
UR  - https://doi.org/10.2991/icadme-15.2015.74
DO  - https://doi.org/10.2991/icadme-15.2015.74
ID  - Zhang2015/10
ER  -