Proceedings of the 5th International Conference on Advanced Design and Manufacturing Engineering

Fabrication of nanostructure arrays induced by laser on Si wafers

Authors
Hua Zhang
Corresponding Author
Hua Zhang
Available Online October 2015.
DOI
10.2991/icadme-15.2015.266How to use a DOI?
Keywords
Semiconductors; Nanostructure Arrays; Laser processing; SEM morphology
Abstract

This work reports a new method of producing nanostructure arrays on monocrystal Si wafers. During the course of electrochemical anodic etching in HF solution, nanostructure arrays formed on N-type Si wafers under laser illumination ( =650nm). A field emitting scanning electronic microscope (FESEM) was used to study the morphology of the samples and an X-ray energy dispersion spectroscope (EDS) was employed to analyze the components of the arrays. Effects of etching time and light sources on the morphology of nanostructure arrays obtained on polished and rough surface of silicon wafer are also studied. Moreover, the growth mechanism is proposed.

Copyright
© 2015, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 5th International Conference on Advanced Design and Manufacturing Engineering
Series
Advances in Engineering Research
Publication Date
October 2015
ISBN
10.2991/icadme-15.2015.266
ISSN
2352-5401
DOI
10.2991/icadme-15.2015.266How to use a DOI?
Copyright
© 2015, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Hua Zhang
PY  - 2015/10
DA  - 2015/10
TI  - Fabrication of nanostructure arrays induced by laser on Si wafers
BT  - Proceedings of the 5th International Conference on Advanced Design and Manufacturing Engineering
PB  - Atlantis Press
SP  - 1438
EP  - 1442
SN  - 2352-5401
UR  - https://doi.org/10.2991/icadme-15.2015.266
DO  - 10.2991/icadme-15.2015.266
ID  - Zhang2015/10
ER  -