Proceedings of the 5th International Conference on Advanced Design and Manufacturing Engineering

Strcture and Infrared Optical Properties Research on Fe-Doped CuAlO2 Semiconductor

Authors
Chuanmao Lv, Yi Huang, Miao Feng, Mei Long, Chuanwu Zhang
Corresponding Author
Chuanmao Lv
Available Online October 2015.
DOI
https://doi.org/10.2991/icadme-15.2015.350How to use a DOI?
Keywords
Fe-Doped CuAlO2, XRD, IR, Solid-phase sintering, Delafossite.
Abstract

Samples of pure phase CuAlO2 and transition metal element Fe doped were synthesized by solid phase sintered method. The phase structure, optical properties and miscellaneous phase formation mechanism were characterized by X-ray diffraction (XRD) and Infrared Spectroscopy (IR) respectively. The results of XRD show that the product was really pure p-type transparent conductive oxide CuAlO2. Samples containing a small amount of CuO mixed phase may be caused by block reaction environment. IR spectroscopy results show that the transmittance of the sample was declined with the increasing of the iron-doped concentration. Doped samples have more than one absorption peak is the result of mixed substitution.

Copyright
© 2015, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 5th International Conference on Advanced Design and Manufacturing Engineering
Series
Advances in Engineering Research
Publication Date
October 2015
ISBN
978-94-6252-113-1
ISSN
2352-5401
DOI
https://doi.org/10.2991/icadme-15.2015.350How to use a DOI?
Copyright
© 2015, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Chuanmao Lv
AU  - Yi Huang
AU  - Miao Feng
AU  - Mei Long
AU  - Chuanwu Zhang
PY  - 2015/10
DA  - 2015/10
TI  - Strcture and Infrared Optical Properties Research on Fe-Doped CuAlO2 Semiconductor
BT  - Proceedings of the 5th International Conference on Advanced Design and Manufacturing Engineering
PB  - Atlantis Press
SP  - 1895
EP  - 1898
SN  - 2352-5401
UR  - https://doi.org/10.2991/icadme-15.2015.350
DO  - https://doi.org/10.2991/icadme-15.2015.350
ID  - Lv2015/10
ER  -