Proceedings of the International Conference on Communication and Signal Processing 2016 (ICCASP 2016)

A Two-dimensional Analytical Model and Simulation for Dual Material Gate Junctionless Transistor

Authors
S. Wagaj, Y. Chavan, S. Patil
Corresponding Author
S. Wagaj
Available Online December 2016.
DOI
https://doi.org/10.2991/iccasp-16.2017.56How to use a DOI?
Keywords
Dual Material Gate (DMG); two-dimensional (2-D) modeling; silicon-on-insulator (SOI) MOSFET; Short channel ef-fects (SCEs).
Abstract
To investigate the short channel effect for Dual Material Gate Silicon on Insulator junction-less Transistor (DMG SOI JLT) of a two dimensional channel potential model is developed. This model is validated by simula-tion (COGENDA Visual TCAD) result. It has been observed that for a junction-less transistor with Dual Materi-al Gate (DMG) current driving capability improves secondly, channel potential step function that results drain voltage variation do not affect on barrier between source and channel due to the work function difference of the gate material. This increase in current driving capability increases and hot electron effect, Drain induced barrier lowering problem and reduces its dual material different work function structure.
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This is an open access article distributed under the CC BY-NC license.

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Proceedings
International Conference on Communication and Signal Processing 2016 (ICCASP 2016)
Part of series
Advances in Intelligent Systems Research
Publication Date
December 2016
ISBN
978-94-6252-305-0
DOI
https://doi.org/10.2991/iccasp-16.2017.56How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - S. Wagaj
AU  - Y. Chavan
AU  - S. Patil
PY  - 2016/12
DA  - 2016/12
TI  - A Two-dimensional Analytical Model and Simulation for Dual Material Gate Junctionless Transistor
BT  - International Conference on Communication and Signal Processing 2016 (ICCASP 2016)
PB  - Atlantis Press
UR  - https://doi.org/10.2991/iccasp-16.2017.56
DO  - https://doi.org/10.2991/iccasp-16.2017.56
ID  - Wagaj2016/12
ER  -