Effect of Side Error on the Static Displacement of Micro-resonator

DOI

10.2991/iccmcee-15.2015.1How to use a DOI?

Keywords

Side error of the movable fingers; The initial overlap length; Static displacement; Dc bias voltage

Abstract

In view of the practical situation, sometimes there is side error of the comb capacitor through superposition of the deep reactive ion etching (DRIE) process, and these manufacturing tolerances can lead to the movable comb fingers offset. Using the software of ANSYS to explore the electrostatic-structural coupled field. Then, the effect of sensitive direction offsets on the static displacement of micro-resonator is analyzed, in addition, the different initial finger overlap, dc bias voltage and side error are considered based on the traditional structure, at the same time, the fringe effect and the corner-effect of comb need to be taken into consideration. The ideas and the simulation results in this paper have a guiding significance for improving the performance of the micro-resonators.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Fen Gao
AU  - ShuYing Hao
AU  - Chengkun Qi
AU  - JingJing Feng
AU  - Huijie Li
PY  - 2015/11
DA  - 2015/11
TI  - Effect of Side Error on the Static Displacement of Micro-resonator
BT  - Proceedings of the 2015 4th International Conference on Computer, Mechatronics, Control and Electronic Engineering
PB  - Atlantis Press
SP  - 1
EP  - 5
SN  - 2352-5401
UR  - https://doi.org/10.2991/iccmcee-15.2015.1
DO  - 10.2991/iccmcee-15.2015.1
ID  - Gao2015/11
ER  -