Enhanced 1.54 m photoluminescence from Er/O-doped Si in photonic crystal double-heterostructure microcavity

DOI

10.2991/iccsae-15.2016.36How to use a DOI?

Keywords

Photonic crystal, Microcavity, Photoluminescence, Silicon.

Abstract

Efficient enhancement of photoluminescence from Er/O-doped silicon (Si) on silicon-on-insulator (SOI) wafer in two-dimensional (2D) airbridge symmetric slab hexagonal photonic crystal (PC) gradient double-heterostructure microcavity has been demonstrated at room temperature. A single sharp resonant peak with 1541.7nm communication wavelength dominates the photoluminescence (PL) spectrum and significant PL enhancement is obtained compared to the case of identically implanted SOI wafer at pumping power of 15mW. The obvious red-shift and degraded Q-factor of resonant peak are present with the pumping power increasing, and the maximum measured Q-factor of 6284 has been achieved at pumping power of 1.5mW.

Copyright

© 2016, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Yue Wang
AU  - Junming An
AU  - Xiongwei Hu
PY  - 2016/02
DA  - 2016/02
TI  - Enhanced 1.54 m photoluminescence from Er/O-doped Si in photonic crystal double-heterostructure microcavity
BT  - Proceedings of the 2015 5th International Conference on Computer Sciences and Automation Engineering
PB  - Atlantis Press
SP  - 188
EP  - 192
SN  - 2352-538X
UR  - https://doi.org/10.2991/iccsae-15.2016.36
DO  - 10.2991/iccsae-15.2016.36
ID  - Wang2016/02
ER  -