Design of an Amorphous In-Ga-Zn-O TFT Current-Scaling Pixel Driving Circuit for AMOLED with Threshold-voltage Shift Compensating
Authors
Chuncheng Yang, Xin Chen, Jian Zhang, Chuannan Li
Corresponding Author
Chuncheng Yang
Available Online March 2013.
- DOI
- 10.2991/iccsee.2013.447How to use a DOI?
- Keywords
- AMOLED, a-IGZO-TFT, threshold-voltage-shift, pixel circuit,
- Abstract
An Amorphous In-Ga-Zn-O TFT (a-IGZO TFTs) Current-Scaling Pixel Circuit for Active Matrix Organic Light-emitting Displays (AMOLEDs) is presented, it composes of four amorphous a-IGZO TFTs and one capacitor (4T-1C), which effectively compensates the threshold-voltage-shift ( Vth 1V) of the drive TFT as well as degradation of the OLED. In a monochromatic 2-inches QVGA AMOLED display, simulating results show that programming current between several pA and hundreds of nA can realize OLED luminance from 1cd/m2 to 200cd/m2, and the aperture ratio of AMOLED with this pixel driving circuit is high as 80%.
- Copyright
- © 2013, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Chuncheng Yang AU - Xin Chen AU - Jian Zhang AU - Chuannan Li PY - 2013/03 DA - 2013/03 TI - Design of an Amorphous In-Ga-Zn-O TFT Current-Scaling Pixel Driving Circuit for AMOLED with Threshold-voltage Shift Compensating BT - Proceedings of the 2nd International Conference on Computer Science and Electronics Engineering (ICCSEE 2013) PB - Atlantis Press SP - 1785 EP - 1788 SN - 1951-6851 UR - https://doi.org/10.2991/iccsee.2013.447 DO - 10.2991/iccsee.2013.447 ID - Yang2013/03 ER -