A novel low-voltage and low-power bandgap voltage reference

DOI

10.2991/icecee-15.2015.146How to use a DOI?

Keywords

bandgap voltage reference; low-power; low-temperature coefficient; subthreshold region

Abstract

The paper proposes a novel low-voltage and low-power bandgap voltage reference, which has superior performance such as low-voltage, low-power and low-temperature coefficient. The simulation based on 0.18-um CMOS process of TSMC. The proposed circuit consists of current source subcircuit, a bipolar transistor and a proportional-to-absolute-Temperature (PTAT) voltage generators, the PTAT voltage generator compensates for negative temperature dependence of a base-emitter voltage in a PNP bipolar transistor, and the voltage with zero temperature coefficient can be generated. Moreover, all of the MOSFETs work in subthreshold region, as a result, the low-voltage and low-power is achieved. The supply voltage is 1V,and it can also work normally from 0.8V to 4V,while the output voltage of the circuit is 0.58V,with maximal power dissipation less than 38nA. The temperature coefficient is about 14.5ppm/ under temperature from -40 to 80 , that means a better temperature stability. So the performance of the proposed circuit is excellent.

Copyright

© 2015, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Xiao Ming Xing
AU  - Jian Cheng Li
AU  - Li Yang
PY  - 2015/06
DA  - 2015/06
TI  - A novel low-voltage and low-power bandgap voltage reference
BT  - Proceedings of the 2015 International Conference on Electrical, Computer Engineering and Electronics
PB  - Atlantis Press
SP  - 746
EP  - 751
SN  - 2352-538X
UR  - https://doi.org/10.2991/icecee-15.2015.146
DO  - 10.2991/icecee-15.2015.146
ID  - Xing2015/06
ER  -