Proceedings of the 2016 4th International Conference on Electrical & Electronics Engineering and Computer Science (ICEEECS 2016)

Research on Pulse Laser for Simulating Transient Radiation Effects on MOS Devices

Authors
Mo Li, Peng Sun, Linzhe Li, Jie Li, Chunhua Qi, Liyi Xiao
Corresponding Author
Mo Li
Available Online December 2016.
DOI
https://doi.org/10.2991/iceeecs-16.2016.123How to use a DOI?
Keywords
MOS; Pulse Laser; Transient Radiation Effects; TCAD
Abstract

In this paper, the transient radiation effect of MOS devices irradiated by pulse laser is studied using TCAD tool. Firstly, the laser radiation model is built up based on the TCAD tool, and also MOS devices model are created and the I-V characteristics are simulated for proving their correctness. With the pulse laser model, the transient responses of MOS devices working in different modes irradiated by pulse laser are simulated. The results show that the transient radiation effect caused by pulse laser when irradiating MOS devices leads to leakage current of the substrate of MOS devices, and the current amplitude increases with the laser's intensity.

Copyright
© 2016, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 2016 4th International Conference on Electrical & Electronics Engineering and Computer Science (ICEEECS 2016)
Series
Advances in Computer Science Research
Publication Date
December 2016
ISBN
978-94-6252-265-7
ISSN
2352-538X
DOI
https://doi.org/10.2991/iceeecs-16.2016.123How to use a DOI?
Copyright
© 2016, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Mo Li
AU  - Peng Sun
AU  - Linzhe Li
AU  - Jie Li
AU  - Chunhua Qi
AU  - Liyi Xiao
PY  - 2016/12
DA  - 2016/12
TI  - Research on Pulse Laser for Simulating Transient Radiation Effects on MOS Devices
BT  - Proceedings of the 2016 4th International Conference on Electrical & Electronics Engineering and Computer Science (ICEEECS 2016)
PB  - Atlantis Press
SP  - 618
EP  - 622
SN  - 2352-538X
UR  - https://doi.org/10.2991/iceeecs-16.2016.123
DO  - https://doi.org/10.2991/iceeecs-16.2016.123
ID  - Li2016/12
ER  -