A P-band GaN Power Amplifier with LRC-LC Stability Network
Authors
Xinyu Ma, Baoxing Duan, Yintang Yang
Corresponding Author
Xinyu Ma
Available Online May 2017.
- DOI
- 10.2991/icmeit-17.2017.67How to use a DOI?
- Keywords
- P-band, GaN, stability network, power amplifier, high efficiency
- Abstract
A P-band high-efficiency, high power GaN power amplifier is designed and relized on the basis of the push-pull structure. The LRC-LC stability network is proposed and applied to the power amplifier circuit for the first time. The LRC-LC stability network can significantly reduce the high gain out the band, which eliminate the instability of the power amplifier circuit. The developed power amplifier exhibits 58.5dBm (700W) power output with a 17dB gain and 85% PAE at 500-600MHz, 300us, 20% duty cycle. It has the highest PAE in P-band among the products at home and abroad.
- Copyright
- © 2017, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Xinyu Ma AU - Baoxing Duan AU - Yintang Yang PY - 2017/05 DA - 2017/05 TI - A P-band GaN Power Amplifier with LRC-LC Stability Network BT - Proceedings of the 2nd International Conference on Mechatronics Engineering and Information Technology (ICMEIT 2017) PB - Atlantis Press SP - 343 EP - 346 SN - 2352-538X UR - https://doi.org/10.2991/icmeit-17.2017.67 DO - 10.2991/icmeit-17.2017.67 ID - Ma2017/05 ER -