Proceedings of the 2nd International Conference on Mechatronics Engineering and Information Technology (ICMEIT 2017)

A P-band GaN Power Amplifier with LRC-LC Stability Network

Authors
Xinyu Ma, Baoxing Duan, Yintang Yang
Corresponding Author
Xinyu Ma
Available Online May 2017.
DOI
https://doi.org/10.2991/icmeit-17.2017.67How to use a DOI?
Keywords
P-band, GaN, stability network, power amplifier, high efficiency
Abstract
A P-band high-efficiency, high power GaN power amplifier is designed and relized on the basis of the push-pull structure. The LRC-LC stability network is proposed and applied to the power amplifier circuit for the first time. The LRC-LC stability network can significantly reduce the high gain out the band, which eliminate the instability of the power amplifier circuit. The developed power amplifier exhibits 58.5dBm (700W) power output with a 17dB gain and 85% PAE at 500-600MHz, 300us, 20% duty cycle. It has the highest PAE in P-band among the products at home and abroad.
Open Access
This is an open access article distributed under the CC BY-NC license.

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Cite this article

TY  - CONF
AU  - Xinyu Ma
AU  - Baoxing Duan
AU  - Yintang Yang
PY  - 2017/05
DA  - 2017/05
TI  - A P-band GaN Power Amplifier with LRC-LC Stability Network
BT  - Proceedings of the 2nd International Conference on Mechatronics Engineering and Information Technology (ICMEIT 2017)
PB  - Atlantis Press
SP  - 343
EP  - 346
SN  - 2352-538X
UR  - https://doi.org/10.2991/icmeit-17.2017.67
DO  - https://doi.org/10.2991/icmeit-17.2017.67
ID  - Ma2017/05
ER  -