Proceedings of the 2017 6th International Conference on Measurement, Instrumentation and Automation (ICMIA 2017)

The growth and properties of self-assembled GaN nanorods, nanoparticles and nanotubes on Si substrates by annealing GaN/ZnO films

Authors
Yuping Cao, Tao Hu
Corresponding Author
Yuping Cao
Available Online June 2017.
DOI
https://doi.org/10.2991/icmia-17.2017.24How to use a DOI?
Keywords
GaN; nanostructures; sputtering
Abstract
GaN nanostructured films have been successfully grown through radio frequency magnetron sputtering system via annealing GaN/ZnO films in ammonia ambient at 950 . The volatilization of ZnO buffer layer plays an important role in the formation process of GaN nanostructures. X-ray diffraction (XRD), transmission electron microscope (TEM), x-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) are used to analyze the structure, morphology, composition and optical properties of the as-grown products. The XRD and selected area electron diffraction (SAED) indicate that the reflections of the samples can be indexed to the hexagonal GaN phase. TEM shows that the products are of pure hexagonal GaN single crystal. By XPS spectra, quantification of peaks gives the atomic ratio of Ga to N of about 1:1.1. The photoluminescence (PL) spectrum indicates that the GaN have a good emission property, which will have potential advantages for applications in laser device using one-dimensional structures. Finally, the proposed growth mechanism is also briefly discussed.
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Proceedings
2017 6th International Conference on Measurement, Instrumentation and Automation (ICMIA 2017)
Part of series
Advances in Intelligent Systems Research
Publication Date
June 2017
ISBN
978-94-6252-387-6
ISSN
1951-6851
DOI
https://doi.org/10.2991/icmia-17.2017.24How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - Yuping Cao
AU  - Tao Hu
PY  - 2017/06
DA  - 2017/06
TI  - The growth and properties of self-assembled GaN nanorods, nanoparticles and nanotubes on Si substrates by annealing GaN/ZnO films
BT  - 2017 6th International Conference on Measurement, Instrumentation and Automation (ICMIA 2017)
PB  - Atlantis Press
SN  - 1951-6851
UR  - https://doi.org/10.2991/icmia-17.2017.24
DO  - https://doi.org/10.2991/icmia-17.2017.24
ID  - Cao2017/06
ER  -