Synthesis and photoluminescence characteristics of Eu3+ doped Bi4Si3O12 red emitting phosphor
Authors
Gonggong Lu, Kehui Qiu, Yunlei Bu, Xilu Hou, Xiqiang Yuan
Corresponding Author
Gonggong Lu
Available Online December 2015.
- DOI
- 10.2991/icmmcce-15.2015.546How to use a DOI?
- Keywords
- Luminescence properties, Bi4Si3O12:Eu3+, LED, Concentration quenching
- Abstract
Eu3+ doped bismuth silicate phosphors, Bi4Si3O12:xEu3+ (0.01 x 0.08) were prepared via sol-gel route. XRD results show the phase of the synthesized phosphors calcinated at 650 is isostructural with Bi4Si3O12. Under the excitation of 261nm and 393nm, there are some sharp emission peaks of Eu3+ ions centered at 595nm, 614nm, 654nm and 706nm in the emission spectra of the Eu3+-doped Bi4Si3O12 phosphors. The strongest ones located at 595nm and 614nm are due to 5D0–7F1, 5D0–7F2 transition of Eu3+. Luminescence intensity reaches maximum value when the concentration of Eu3+ ions equals 7mol%. The Bi4Si3O12: Eu3+ phosphors may be potentially used as red phosphors for white light-emitting diodes.
- Copyright
- © 2015, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Gonggong Lu AU - Kehui Qiu AU - Yunlei Bu AU - Xilu Hou AU - Xiqiang Yuan PY - 2015/12 DA - 2015/12 TI - Synthesis and photoluminescence characteristics of Eu3+ doped Bi4Si3O12 red emitting phosphor BT - Proceedings of the 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering 2015 PB - Atlantis Press SN - 2352-538X UR - https://doi.org/10.2991/icmmcce-15.2015.546 DO - 10.2991/icmmcce-15.2015.546 ID - Lu2015/12 ER -