Proceedings of the 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering 2015

Study of tungsten deposited on amorphous Si, Si (111) and SiO2 using direct-current magnetron sputtering

Authors
Rui Zhang, Xiangquan Jiao, Hui Zhong, Yu Shi
Corresponding Author
Rui Zhang
Available Online December 2015.
DOI
10.2991/icmmcce-15.2015.573How to use a DOI?
Keywords
Tungsten thin films, DC sputtering, texture, residual stress, electrical resistivity
Abstract

Tungsten (W) commonly serves as the electrode layer or acoustic reflector layer for the highly columnar growth of AlN piezoelectric thin films used to fabricate film bulk acoustic resonators in power applications. The structure of W film directly influences the texture of AlN thin films above. Moreover, the surface morphology and texture of W thin films are influenced by the substrate materials. In this study, the effects of different underlays on the characteristics of W films deposited using direct-current magnetron sputtering are compared. The results show that W thin film deposited on SiO2 has well-orientated crystallization, dense microstructure, the smallest RMS and the lowest electrical resistivity. W thin film deposited on Si (111) has the worst RMS and electrical resistivity but a common residual stress and crystallization. W deposited on amorphous Si ( -Si) presents column-like microstructure, the lowest residual stress but a common RMS and electrical resistivity. Since the substrate materials have direct impacts on the resonators it is necessary to take these impacts into account during the design stage of filters or sensors based on film bulk acoustic resonators.

Copyright
© 2015, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering 2015
Series
Advances in Computer Science Research
Publication Date
December 2015
ISBN
10.2991/icmmcce-15.2015.573
ISSN
2352-538X
DOI
10.2991/icmmcce-15.2015.573How to use a DOI?
Copyright
© 2015, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Rui Zhang
AU  - Xiangquan Jiao
AU  - Hui Zhong
AU  - Yu Shi
PY  - 2015/12
DA  - 2015/12
TI  - Study of tungsten deposited on amorphous Si, Si (111) and SiO2 using direct-current magnetron sputtering
BT  - Proceedings of the 4th International Conference on Mechatronics, Materials, Chemistry and Computer Engineering 2015
PB  - Atlantis Press
SN  - 2352-538X
UR  - https://doi.org/10.2991/icmmcce-15.2015.573
DO  - 10.2991/icmmcce-15.2015.573
ID  - Zhang2015/12
ER  -