Proceedings of the 2016 4th International Conference on Machinery, Materials and Computing Technology

Phase-Field Simulation for the Effects of Initial Vacancy Concentration and Annealing Temperature on Oxygen Clusters in Silicon Wafer

Authors
Xiao-Jun Guan, Xiang Ji
Corresponding Author
Xiao-Jun Guan
Available Online March 2016.
DOI
https://doi.org/10.2991/icmmct-16.2016.377How to use a DOI?
Keywords
phase field simulation; silicon wafer; low temperature annealing; initial vacancy concentration; annealing temperature; oxygen clusters.
Abstract
In order to investigate the dual effect of initial vacancy concentration and annealing temperature on oxygen clusters′ evolution in RTP-treated silicon wafer during low temperature annealing, an established phase-field model and the optimum design method based on response surface was used to simulated the processes of oxygen clusters′ evolution under their different combined conditions. The results show that the comprehensive influence of initial vacancy and annealing temperature on oxygen clusters mainly comes from their respective effects, and when initial vacancy concentration is higher than 1×1015 cm-3 and annealing temperature changes from 1075 K to 1175 K, the more numerous oxygen clusters can generate in the process of low temperature annealing.
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This is an open access article distributed under the CC BY-NC license.

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Volume Title
Proceedings of the 2016 4th International Conference on Machinery, Materials and Computing Technology
Series
Advances in Engineering Research
Publication Date
March 2016
ISBN
978-94-6252-165-0
ISSN
2352-5401
DOI
https://doi.org/10.2991/icmmct-16.2016.377How to use a DOI?
Open Access
This is an open access article distributed under the CC BY-NC license.

Cite this article

TY  - CONF
AU  - Xiao-Jun Guan
AU  - Xiang Ji
PY  - 2016/03
DA  - 2016/03
TI  - Phase-Field Simulation for the Effects of Initial Vacancy Concentration and Annealing Temperature on Oxygen Clusters in Silicon Wafer
BT  - Proceedings of the 2016 4th International Conference on Machinery, Materials and Computing Technology
PB  - Atlantis Press
SP  - 1893
EP  - 1897
SN  - 2352-5401
UR  - https://doi.org/10.2991/icmmct-16.2016.377
DO  - https://doi.org/10.2991/icmmct-16.2016.377
ID  - Guan2016/03
ER  -