Phase-Field Simulation for the Effects of Initial Vacancy Concentration and Annealing Temperature on Oxygen Clusters in Silicon Wafer
- 10.2991/icmmct-16.2016.377How to use a DOI?
- phase field simulation; silicon wafer; low temperature annealing; initial vacancy concentration; annealing temperature; oxygen clusters.
In order to investigate the dual effect of initial vacancy concentration and annealing temperature on oxygen clustersâ€² evolution in RTP-treated silicon wafer during low temperature annealing, an established phase-field model and the optimum design method based on response surface was used to simulated the processes of oxygen clustersâ€² evolution under their different combined conditions. The results show that the comprehensive influence of initial vacancy and annealing temperature on oxygen clusters mainly comes from their respective effects, and when initial vacancy concentration is higher than 1Ã—1015 cm-3 and annealing temperature changes from 1075 K to 1175 K, the more numerous oxygen clusters can generate in the process of low temperature annealing.
- © 2016, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Xiao-Jun Guan AU - Xiang Ji PY - 2016/03 DA - 2016/03 TI - Phase-Field Simulation for the Effects of Initial Vacancy Concentration and Annealing Temperature on Oxygen Clusters in Silicon Wafer BT - Proceedings of the 2016 4th International Conference on Machinery, Materials and Computing Technology PB - Atlantis Press SP - 1893 EP - 1897 SN - 2352-5401 UR - https://doi.org/10.2991/icmmct-16.2016.377 DO - 10.2991/icmmct-16.2016.377 ID - Guan2016/03 ER -