Effects of W⁶+ Doping on Structure and Electrical Property of VO₂ (A) Thin Film

DOI

10.2991/icsd-17.2017.25How to use a DOI?

Keywords

VO₂ (A) film; Sol-gel; Tungsten; electrical property.

Abstract

Thin films composed of high pure VO₂ (A) doped W⁶+ ions were successfully prepared by an inorganic sol-gel method. The effects of W⁶+ ions doping on the structure, surface morphology and electrical property the films were investigated. The results show that the solution of W⁶+ ions distorted the lattice of VO₂ (A) film, and made the lattice parameter d increase. With W⁶+ ions concentration increase, the grain size of the film increased, and the grain shape became rod or block from sphere. The film resistance decreases sharply, near one magnitude with the W⁶+ doping concentration increase from 0 to 0.75 at%. And W⁶+ doping made the film TCR close to zero from a negative value, the film change to metal from semiconductor.

Copyright

© 2017, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Kang-Kang Zhang
AU  - Guang-You Pan
AU  - Yuan-Yuan Dang
AU  - Wei-Yan Qi
AU  - Qiang Liu
AU  - Yuan-Bao Li
AU  - Jun-Cheng Liu
PY  - 2017/07
DA  - 2017/07
TI  - Effects of W⁶+ Doping on Structure and Electrical Property of VO₂ (A) Thin Film
BT  - Proceedings of the 3rd 2017 International Conference on Sustainable Development (ICSD 2017)
PB  - Atlantis Press
SP  - 164
EP  - 169
SN  - 2352-5401
UR  - https://doi.org/10.2991/icsd-17.2017.25
DO  - 10.2991/icsd-17.2017.25
ID  - Zhang2017/07
ER  -