Proceedings of the 2015 4th International Conference on Sensors, Measurement and Intelligent Materials

Process Simulation of Shear Band on Initial Defect in Soil

Authors
Shiwei Hou, Shijian Hu, Shaopo Guo, Xin Zhang
Corresponding Author
Shiwei Hou
Available Online January 2016.
DOI
https://doi.org/10.2991/icsmim-15.2016.165How to use a DOI?
Keywords
shear band; initial defect; end effect; deformation process
Abstract

Formation mechanism of shear band in normal consolidated soil were analyzed based on Modified Cam-Clay model under triaxial condition. The end effect and initial defect were considered. The results proved that end restraint and initial defect can induce and control the formation process and shape of shear band. The stress and strain relationship of different part were obtained to present the bifurcation character and stress axial rotation. The interaction of different boundary and initial defect settings was analyzed in order to obtain the mechanism and deformation process of shear band.

Copyright
© 2016, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Download article (PDF)

Volume Title
Proceedings of the 2015 4th International Conference on Sensors, Measurement and Intelligent Materials
Series
Advances in Computer Science Research
Publication Date
January 2016
ISBN
978-94-6252-157-5
ISSN
2352-538X
DOI
https://doi.org/10.2991/icsmim-15.2016.165How to use a DOI?
Copyright
© 2016, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Shiwei Hou
AU  - Shijian Hu
AU  - Shaopo Guo
AU  - Xin Zhang
PY  - 2016/01
DA  - 2016/01
TI  - Process Simulation of Shear Band on Initial Defect in Soil
BT  - Proceedings of the 2015 4th International Conference on Sensors, Measurement and Intelligent Materials
PB  - Atlantis Press
SP  - 897
EP  - 902
SN  - 2352-538X
UR  - https://doi.org/10.2991/icsmim-15.2016.165
DO  - https://doi.org/10.2991/icsmim-15.2016.165
ID  - Hou2016/01
ER  -