Proceedings of the International Conference on Sustainable Micro-Nano Materials & Innovative Technology (ICSUMMIT 2026)

International Conference on Sustainable Micro-Nano Materials & Innovative Technology (ICSUMMIT 2026)

📍Vadodara, India🗓️ 13-14 February 2026
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Strain-Induced Performance Modulation in IGBT Devices: A TCAD-Based Analysis

Authors
Alok Naugarhiya1, *, Ketan Deshmukh1, Kundan Kumar1, Vidya Bhushan Rathore1, P. N. Kondekar2, Jitendra Kumar Singh1
1Dept.of Electronics and Communication Engineering, National Institute of Technology, Raipur, Chhattisgarh, India
2Dept.of Electronics and Communication Engineering, PDPM-Indian Institute of Information Technology Design and Manufacturing, Jabalpur, Madhya Pradesh, India
*Corresponding author. Email: anaugarhiya.ece@nitrr.ac.in
Corresponding Author
Alok Naugarhiya
Available Online 22 July 2026.
DOI
10.2991/978-94-6239-727-9_6How to use a DOI?
Keywords
SiGe; IGBT; TCAD Simulation; Bandgap Engineering; Power Semiconductor; Carrier Mobility
Abstract

In this paper, the performance of an IGBT with a Si0.75Ge0.25 layer in the p-body is analyses using TCAD. SiGe has a small bandgap, enhancing carrier mobility and hole injection efficiency and improving conduction characteristics. The simulation results show that the SiGe-engineered IGBT has a total current density (0.822 A/cm2 vs 0.791 A/cm2) and a saturation current (24.6 nA vs 23.5 nA) that are 4% and 5% higher, respectively, than those of conventional PT-IGBT structures, yet with the same threshold voltage (0.9 V). These improvements, however, are accompanied by a 2 per cent decline in breakdown voltage (1232 V vs 1257 V) owing to altered impact ionisation rates. The effects of the SiGe p-body are also investigated by analysing the quasi-Fermi levels, which show that the carrier injection barrier in the SiGe device has been reduced, increasing carrier transport efficiency.

Copyright
© 2026 The Author(s)
Open Access
Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

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Volume Title
Proceedings of the International Conference on Sustainable Micro-Nano Materials & Innovative Technology (ICSUMMIT 2026)
Series
Atlantis Highlights in Engineering
Publication Date
22 July 2026
ISBN
978-94-6239-727-9
ISSN
2589-4943
DOI
10.2991/978-94-6239-727-9_6How to use a DOI?
Copyright
© 2026 The Author(s)
Open Access
Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

Cite this article

risenwbib
TY  - CONF
AU  - Alok Naugarhiya
AU  - Ketan Deshmukh
AU  - Kundan Kumar
AU  - Vidya Bhushan Rathore
AU  - P. N. Kondekar
AU  - Jitendra Kumar Singh
PY  - 2026
DA  - 2026/07/22
TI  - Strain-Induced Performance Modulation in IGBT Devices: A TCAD-Based Analysis
BT  - Proceedings of the International Conference on Sustainable Micro-Nano Materials & Innovative Technology (ICSUMMIT 2026)
PB  - Atlantis Press
SP  - 59
EP  - 67
SN  - 2589-4943
UR  - https://doi.org/10.2991/978-94-6239-727-9_6
DO  - 10.2991/978-94-6239-727-9_6
ID  - Naugarhiya2026
ER  -