Design and Enhancement of Gate-Stacked Recessed-Gate HEMTs with Back-Barrier for RF Applications

DOI

10.2991/978-94-6239-727-9_7How to use a DOI?

Keywords

Back-barrier layer (BBL); TCAD device simulation; AlGaN/GaN HEMTs; Stacked gate dielectrics; Two-dimensional electron gas (2DEG); Gate-recessed HEMT

Abstract

Gate electrostatic control has become crucial for the reliable working of enhancement-mode GaN based high-frequency and power transistors. In this work, recessed-gate GaN HEMT with a stacked gate dielectric and an AlGaN back-barrier layer is analyzed using TCAD simulations and is compared with a former recessed-gate design with the same back-barrier arrangement. The presence of stacked dielectric improves gate-to-channel electrostatic coupling and increases the vertical electric-field control resulting in the effective improved transconductance and higher drain current drive capability. The effect of changing the work function of gate metal is analyzed regarding threshold voltage, transconductance, and transfer characteristics. The results of the simulations suggest that the proposed design shows much less off-state leakage and greater electrostatic integrity than the device in the benchmark. Also, the characteristics of the device such as threshold voltage, transconductance, drain current that show a direct current response, improve greatly as a result of the confinement of the carriers increased by the AlGaN backbarrier layer. The synergistic design approach of the proposed HEMT shows a very promising prospect to be military grade augmented.

Copyright

© 2026 The Author(s)

Open Access

Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

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TY  - CONF
AU  - Bhavinkumar Shekhada
AU  - Tarun Chaudhary
AU  - Mandeep Singh
PY  - 2026
DA  - 2026/07/22
TI  - Design and Enhancement of Gate-Stacked Recessed-Gate HEMTs with Back-Barrier for RF Applications
BT  - Proceedings of the International Conference on Sustainable Micro-Nano Materials & Innovative Technology (ICSUMMIT 2026)
PB  - Atlantis Press
SP  - 68
EP  - 83
SN  - 2589-4943
UR  - https://doi.org/10.2991/978-94-6239-727-9_7
DO  - 10.2991/978-94-6239-727-9_7
ID  - Shekhada2026
ER  -