Effect of annealing temperature on the electrical properties of HfAlO thin films
- DOI
- 10.2991/ifeesd-16.2016.109How to use a DOI?
- Keywords
- High-K gate dielectrics, HfAlO, ALD, Electrical properties
- Abstract
High-K gate dielectric HfAlO thin films with different temperature annealing treatment have been deposited on Si substrate by Atomic layer deposition (ALD). The electrical properties of Hf-films are analyzed by measurement of high frequency capacitance-voltage (C-V) and leakage current density-voltage (I-V) characteristics. The electrical measurement results indicate the decrease of equivalent oxide thickness (EOT) due to the great change of microstructure and densification after high temperature annealing and the increase of permittivity. But the interface state density increases. Moreover, the leakage current increases with the increase of annealing temperature. The HfAlO film annealed at 650 has the best electrical parameters, such as dielectric constant, EOT and leakage current density determined through CV measurement were 23.5, 0.84, 6.8ž10-7mA cm-2, respectively.
- Copyright
- © 2016, the Authors. Published by Atlantis Press.
- Open Access
- This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).
Cite this article
TY - CONF AU - Chun Li AU - Zhiwei He PY - 2016/05 DA - 2016/05 TI - Effect of annealing temperature on the electrical properties of HfAlO thin films BT - Proceedings of the 2016 International Forum on Energy, Environment and Sustainable Development PB - Atlantis Press SP - 599 EP - 603 SN - 2352-5401 UR - https://doi.org/10.2991/ifeesd-16.2016.109 DO - 10.2991/ifeesd-16.2016.109 ID - Li2016/05 ER -