Study on the design of semiconducting anti icing RTV coatings
Fang Zhenyu, Wu Peiyun
Available Online January 2015.
- https://doi.org/10.2991/isci-15.2015.348How to use a DOI?
- anti icing; semiconductor RTV; hydrophobic anti icing
- At present, the application of transmission line insulator anti pollution flashover coating is mainly the room temperature vulcanized (Room Temperature Vulcanized, RTV) silicone rubber coating. Insulator coated with RTV paint, not only enhanced the hydrophobicity on the surface of the insulator, pollution layer of its surface area poly also obtains the hydrophobicity of different degree, namely the coating has good hydrophobicity transfer. The hydrophobic coating with excellent surface water is less, not to form water film continuously, however when the coating is covered with ice after the loss of hydrophobicity, and ordinary as the porcelain insulator. Based on this, this paper puts forward to want to have certain characteristics in basic water repellent anti icing effect, the silicone rubber coating modified into a semiconductor coating, which has two characteristics of hydrophobic properties and semi conductive properties, direct coated ice covering proof coating in porcelain insulator surface can be. Hydrophobic properties can reduce the adhesion surface ice and materials and reduce the density of ice coating, and the changes of ice form, but not to delay and prevent icing. The volume resistivity of coating is the main factor affecting the overall amount of insulator fever. Through the adjustment of the volume resistivity of coating can make the insulator to obtain large.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Fang Zhenyu AU - Wu Peiyun PY - 2015/01 DA - 2015/01 TI - Study on the design of semiconducting anti icing RTV coatings BT - 2015 International Symposium on Computers & Informatics PB - Atlantis Press SP - 2681 EP - 2688 SN - 2352-538X UR - https://doi.org/10.2991/isci-15.2015.348 DO - https://doi.org/10.2991/isci-15.2015.348 ID - Zhenyu2015/01 ER -