Proceedings of the IV International research conference "Information technologies in Science, Management, Social sphere and Medicine" (ITSMSSM 2017)

TCAD simulation of MIS-gated power GaN transistors

Authors
Evgeny Erofeev, Ivan Fedin, Ilya Kutkov, Valeria Fedina
Corresponding Author
Evgeny Erofeev
Available Online December 2017.
DOI
https://doi.org/10.2991/itsmssm-17.2017.9How to use a DOI?
Keywords
power electonics, GaN transistor, p-GaN, self-aligned, threshold voltage, Schottky, MIS-gate
Abstract

E-mode AlGaN/GaN HEMTs are generally promising candidate for switching power transistors due to their high breakdown voltage, high current density and low on-resistance. The threshold voltage (Vth) of normally-off mode AlGaN/GaN HEMTs with a self-aligned p-type GaN gate can be successfully improved by inserting a SiN insulator between the p-GaN and a Schottky gate electrode. The Vth can be increased from +1.5 V to +6.8 V by inserting of 15 nm SiN layer. Moreover, the sub-threshold drain and on-state gate currents of p-gate GaN transistor were decreased.

Copyright
© 2017, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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Volume Title
Proceedings of the IV International research conference "Information technologies in Science, Management, Social sphere and Medicine" (ITSMSSM 2017)
Series
Advances in Computer Science Research
Publication Date
December 2017
ISBN
978-94-6252-432-3
ISSN
2352-538X
DOI
https://doi.org/10.2991/itsmssm-17.2017.9How to use a DOI?
Copyright
© 2017, the Authors. Published by Atlantis Press.
Open Access
This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

Cite this article

TY  - CONF
AU  - Evgeny Erofeev
AU  - Ivan Fedin
AU  - Ilya Kutkov
AU  - Valeria Fedina
PY  - 2017/12
DA  - 2017/12
TI  - TCAD simulation of MIS-gated power GaN transistors
BT  - Proceedings of the IV International research conference "Information technologies in Science, Management, Social sphere and Medicine" (ITSMSSM 2017)
PB  - Atlantis Press
SP  - 35
EP  - 39
SN  - 2352-538X
UR  - https://doi.org/10.2991/itsmssm-17.2017.9
DO  - https://doi.org/10.2991/itsmssm-17.2017.9
ID  - Erofeev2017/12
ER  -