Proceedings of the IV International research conference "Information technologies in Science, Management, Social sphere and Medicine" (ITSMSSM 2017)

TCAD simulation of MIS-gated power GaN transistors

Authors
Evgeny Erofeev, Ivan Fedin, Ilya Kutkov, Valeria Fedina
Corresponding Author
Evgeny Erofeev
Available Online December 2017.
DOI
https://doi.org/10.2991/itsmssm-17.2017.9How to use a DOI?
Keywords
power electonics, GaN transistor, p-GaN, self-aligned, threshold voltage, Schottky, MIS-gate
Abstract
E-mode AlGaN/GaN HEMTs are generally promising candidate for switching power transistors due to their high breakdown voltage, high current density and low on-resistance. The threshold voltage (Vth) of normally-off mode AlGaN/GaN HEMTs with a self-aligned p-type GaN gate can be successfully improved by inserting a SiN insulator between the p-GaN and a Schottky gate electrode. The Vth can be increased from +1.5 V to +6.8 V by inserting of 15 nm SiN layer. Moreover, the sub-threshold drain and on-state gate currents of p-gate GaN transistor were decreased.
Open Access
This is an open access article distributed under the CC BY-NC license.

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Cite this article

TY  - CONF
AU  - Evgeny Erofeev
AU  - Ivan Fedin
AU  - Ilya Kutkov
AU  - Valeria Fedina
PY  - 2017/12
DA  - 2017/12
TI  - TCAD simulation of MIS-gated power GaN transistors
BT  - IV International research conference "Information technologies in Science, Management, Social sphere and Medicine" (ITSMSSM 2017)
PB  - Atlantis Press
SP  - 35
EP  - 39
SN  - 2352-538X
UR  - https://doi.org/10.2991/itsmssm-17.2017.9
DO  - https://doi.org/10.2991/itsmssm-17.2017.9
ID  - Erofeev2017/12
ER  -