TCAD simulation of MIS-gated power GaN transistors
Evgeny Erofeev, Ivan Fedin, Ilya Kutkov, Valeria Fedina
Available Online December 2017.
- https://doi.org/10.2991/itsmssm-17.2017.9How to use a DOI?
- power electonics, GaN transistor, p-GaN, self-aligned, threshold voltage, Schottky, MIS-gate
- E-mode AlGaN/GaN HEMTs are generally promising candidate for switching power transistors due to their high breakdown voltage, high current density and low on-resistance. The threshold voltage (Vth) of normally-off mode AlGaN/GaN HEMTs with a self-aligned p-type GaN gate can be successfully improved by inserting a SiN insulator between the p-GaN and a Schottky gate electrode. The Vth can be increased from +1.5 V to +6.8 V by inserting of 15 nm SiN layer. Moreover, the sub-threshold drain and on-state gate currents of p-gate GaN transistor were decreased.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Evgeny Erofeev AU - Ivan Fedin AU - Ilya Kutkov AU - Valeria Fedina PY - 2017/12 DA - 2017/12 TI - TCAD simulation of MIS-gated power GaN transistors BT - IV International research conference "Information technologies in Science, Management, Social sphere and Medicine" (ITSMSSM 2017) PB - Atlantis Press SN - 2352-538X UR - https://doi.org/10.2991/itsmssm-17.2017.9 DO - https://doi.org/10.2991/itsmssm-17.2017.9 ID - Erofeev2017/12 ER -