Design of External Memory Error Detection and Correction and Automatic Write-back

DOI

10.2991/mbdasm-19.2019.44How to use a DOI?

Keywords

Single Event Upset (SEU); external memory; memory controlle; Error Detection and Correction (EDAC) code; radiation hazards

Abstract

For space application, in order to improve the reliability of memory operation, the SEC-DED (40, 32) Hamming code is used for single event flip (SEU) fault protection of external memory for 8-bit width parity memory. Based on the (39,32) Hisao code, a parity bit is added to minimize the error correction probability of 3-bit error. By reusing the encoder and decoder, EDAC circuit area is reduced by 16.5%. By modifying Finite State Machine (FSM) of the memory controller, the faults detection and correction, and automatic write-back function of the corrected data are all complemented. Experimental results indicate that all 1 bit faults can be auto corrected and don’t affect the program results; all 2 bits faults can be detected, and the access memory operation can be terminated in time and take error detection trap. By adding fault tolerant design, read operation would have performance loss, but the SEU failure rate is lower by 6 orders of magnitude.

Copyright

© 2019, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Jianlei Wei
PY  - 2019/10
DA  - 2019/10
TI  - Design of External Memory Error Detection and Correction and Automatic Write-back
BT  - Proceedings of the 2019 International Conference on Mathematics, Big Data Analysis and Simulation and Modelling (MBDASM 2019)
PB  - Atlantis Press
SP  - 191
EP  - 194
SN  - 2352-538X
UR  - https://doi.org/10.2991/mbdasm-19.2019.44
DO  - 10.2991/mbdasm-19.2019.44
ID  - Wei2019/10
ER  -