The Influence of Vibration on the Performance of VDMOS Devices
Yin Jinghua, Gao Xinyu, Chen Minghua, Song Mingxin
Available Online December 2012.
- https://doi.org/10.2991/mems.2012.48How to use a DOI?
- VDMOS device; electrical properties; vibration frequency; vibration time; failure mechanism
- In this paper, the package TO-220C VDMOS devices are tested under the conditions of variable frequency and fixed-frequency vibration and the influence of vibration on source current leakage IDS and transconductance gm of device are discussed. The changes of device casing and chip surface are observed by microscope and the failure mechanism of device is analyzed. The experimental results show that IDS and gm of device became smaller with the increase of variable frequency. When the vibration frequency reaches 320Hz, the values of IDS and gm reached device failure criterion. Because parameters of each layer material in cell are different, the distribution of strains among layers which is caused by vibration generates defect or crazes. With the increase of time of the fixed-frequency vibration, some cell appears micro-cracks which expand to more cells gradually, which lead to device failure, life of VDMOS becomes shorter.
- Open Access
- This is an open access article distributed under the CC BY-NC license.
Cite this article
TY - CONF AU - Yin Jinghua AU - Gao Xinyu AU - Chen Minghua AU - Song Mingxin PY - 2012/12 DA - 2012/12 TI - The Influence of Vibration on the Performance of VDMOS Devices BT - Proceedings of the 1st International Conference on Mechanical Engineering and Material Science (MEMS 2012) PB - Atlantis Press SP - 176 EP - 179 SN - 1951-6851 UR - https://doi.org/10.2991/mems.2012.48 DO - https://doi.org/10.2991/mems.2012.48 ID - Jinghua2012/12 ER -