State-of-the-art MOSFET and TCAD in the advancement of technology: A review

DOI

10.2991/msc-18.2018.6How to use a DOI?

Keywords

Metal-oxide-semiconductor-field-effect-transistor, electronics devices, technology computer-aided design

Abstract

The concept of metal-oxide-semiconductor-field-effect-transistor (MOSFET) was proposed by Julius Edgar Lilienfeld and the electrical characterization and mathematical theory began since 1959 at Bell Telephone Laboratories. It has been a revolutionary invention since then and have led to the new generation miniaturized high performance electronics devices like TFET, nano-MOSFETs, FINFET, CNT, nanowire FET, etc. In addition to the rapidly increasing semiconductor industries which have secure significant percentage of the global market, the need to trace back and follow up the progress is quite an essential work which has been carried out time to time. In this work, the historical development of electronics devices, the state-of-the-art MOSFET with the inclusion of threshold voltage roll-off, drain induced barrier lowering and the concept of band-to-band-tunnelling and other such short channel effects (SCEs) encountered in device scaling and emerging novel devices are reviewed, which are believed to be solution of the scaling era as in International Technology Roadmap for Semiconductors (ITRS). In concurrent with the development of technology in various fields the role of technology computer-aided design (TCAD) tools in the advancement of semiconductor industries and originator of such trend have also been illustrated and with the miniaturizing effects encountered by silicon based CMOS technology in the present scenario, researchers have proposed and articulated The End of the Road for Silicon or The Road to the End of CMOS Scaling foreseeing the current challenges faced by CMOS. Hence, beyond CMOS devices proposed by eminent researchers and ITRS have also been briefly outlined.

Copyright

© 2018, the Authors. Published by Atlantis Press.

Open Access

This is an open access article distributed under the CC BY-NC license (http://creativecommons.org/licenses/by-nc/4.0/).

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TY  - CONF
AU  - Lalthanpuii Khiangte
AU  - Rudra Sankar Dhar
AU  - Kuleen Kumar
AU  - Jonathan Laldingliana Pachuau
PY  - 2018/12
DA  - 2018/12
TI  - State-of-the-art MOSFET and TCAD in the advancement of technology: A review
BT  - Proceedings of the Mizoram Science Congress 2018 (MSC 2018) - Perspective and Trends in the Development of Science Education and Research
PB  - Atlantis Press
SP  - 37
EP  - 41
SN  - 2352-5401
UR  - https://doi.org/10.2991/msc-18.2018.6
DO  - 10.2991/msc-18.2018.6
ID  - Khiangte2018/12
ER  -