Analysis of Drain Current and Transconductance characteristics of Nano-Wire FET for Low Power Circuit Application

DOI

10.2991/978-94-6239-707-1_28How to use a DOI?

Keywords

NW FET; GAA; SS; FET

Abstract

Because of their better electrostatic control and lower short-channel effects, NW-FETs have become attractive options for low-power and high-performance nanoelectronic devices. The drain current and transconductance properties of nanowire FETs are fully investigated in this work, with a focus on low-power performance. To assess the device’s efficiency in subthreshold and strong inversion areas, the drain current behaviour is examined under various gate bias and channel length circumstances. To evaluate the device’s switching capacity and gate control efficiency, transconductance properties are investigated. To comprehend their influence on power consumption, important performance measures, including threshold voltage, subthreshold slope, and transconductance efficiency, are investigated. The findings show that nanowire FETs are appropriate for energy-efficient VLSI systems because they have better current control and increased transconductance at lower supply voltages. This paper demonstrates the substantial benefits that nanowire-based transistor designs provide for the construction of next-generation low-power integrated circuits.

Copyright

© 2026 The Author(s)

Open Access

Open Access This chapter is licensed under the terms of the Creative Commons Attribution-NonCommercial 4.0 International License (http://creativecommons.org/licenses/by-nc/4.0/), which permits any noncommercial use, sharing, adaptation, distribution and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license and indicate if changes were made.

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TY  - CONF
AU  - Shagun Pandit
AU  - Ashiwani Kumar Rana
AU  - Mandeep Singh
PY  - 2026
DA  - 2026/06/18
TI  - Analysis of Drain Current and Transconductance characteristics of Nano-Wire FET for Low Power Circuit Application
BT  - Proceedings of the International Conference on Recent Advances in Intelligent and Sustainable Technologies (RAIST 2026)
PB  - Atlantis Press
SP  - 320
EP  - 327
SN  - 2589-4919
UR  - https://doi.org/10.2991/978-94-6239-707-1_28
DO  - 10.2991/978-94-6239-707-1_28
ID  - Pandit2026
ER  -